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1. (WO2013115614) SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/115614    International Application No.:    PCT/KR2013/000862
Publication Date: 08.08.2013 International Filing Date: 04.02.2013
IPC:
H01L 33/22 (2010.01), H01L 33/30 (2010.01)
Applicants: SEOUL VIOSYS CO., LTD. [KR/KR]; (Wonsi-dong) 1 Block 36 ho 65-16, Sandan-ro 163 beon-gil Danwon-gu, Ansan-si Gyeonggi-do 425-851 (KR)
Inventors: KIM, Ye Seul; (KR).
YOON, Yeo Jin; (KR).
KIM, Kyoung Wan; (KR).
SUH, Duk Il; (KR).
KIM, Tae kyoon; (KR)
Agent: MAPS INTELLECTUAL PROPERTY LAW FIRM; (Jeil Pharmaceutical Bldg., Banpo-dong), 4F, 343, Sapyoung-daero, Seocho-gu Seoul 137-810 (KR)
Priority Data:
10-2012-0011258 03.02.2012 KR
Title (EN) SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR ET PROCÉDÉ DE PRODUCTION ASSOCIÉ
(KO) 반도체 발광소자 및 그 제조방법
Abstract: front page image
(EN)Disclosed are a semiconductor light-emitting element and a production method therefor. The semiconductor light-emitting element comprises: a substrate; a first GaN layer formed on the substrate; an active layer formed on the first GaN layer; and a second GaN layer formed on the active layer. The first GaN layer comprises etching pits, wherein the etching pits have spherical nanoparticles formed therein.
(FR)La présente invention se rapporte à un élément électroluminescent à semi-conducteur et à un procédé de production associé, l'élément électroluminescent à semi-conducteur comprenant : un substrat ; une première couche de GaN formée sur le substrat ; une couche active formée sur la première couche de GaN ; et une seconde couche GaN formée sur la couche active. La première couche GaN comprend la gravure de creux, et des nanoparticules sphériques sont formées dans le creux de gravure.
(KO)반도체 발광소자 및 그 제조 방법이 개시되며, 상기 반도체 발광소자는 기판, 상기 기판 상에 형성된 제 1 GaN층, 상기 제 1 GaN 층 상에 형성된 활성층, 및 상기 활성층 상에 형성된 제 2 GaN층을 포함하고, 상기 제1 GaN 층은 에칭 피트를 포함하며, 상기 에칭 피트 내에 구형 나노입자가 형성될 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)