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1. (WO2013115353) SUBSTRATE AND SUBSTRATE PROCESSING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/115353    International Application No.:    PCT/JP2013/052327
Publication Date: 08.08.2013 International Filing Date: 01.02.2013
Chapter 2 Demand Filed:    12.06.2013    
IPC:
B23K 26/40 (2006.01), B23K 26/06 (2006.01), B23K 26/38 (2006.01), B28D 5/00 (2006.01), H01L 21/304 (2006.01)
Applicants: SHIN-ETSU POLYMER CO., LTD. [JP/JP]; 1-9, Kanda-Sudacho, Chiyoda-ku, Tokyo 1010041 (JP).
NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY [JP/JP]; 255, Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 3388570 (JP)
Inventors: MATSUO, Rika; (JP).
SUZUKI, Hideki; (JP).
KUNISHI, Yosuke; (JP).
IKENO, Junichi; (JP)
Agent: MIYOSHI, Hidekazu; Toranomon Kotohira Tower, 2-8, Toranomon 1-chome, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
2012-020067 01.02.2012 JP
Title (EN) SUBSTRATE AND SUBSTRATE PROCESSING METHOD
(FR) SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板及び基板加工方法
Abstract: front page image
(EN)A thin silicon substrate is provided for which a product rate is maintained. A monocrystalline substrate (10) having a modified layer (14) having periodic structures having a different crystal orientation to the crystal orientation of the substrate (10) formed therein, said periodic structures being connected.
(FR)L'invention concerne un substrat de silicium mince pour lequel un taux de produit est maintenu. L'invention concerne un substrat monocristallin (10) comprenant une couche modifiée (14) comprenant des structures périodiques présentant une orientation cristalline différente de l'orientation cristalline du substrat (10) formé à l'intérieur, lesdites structures périodiques étant raccordées.
(JA) 薄いシリコン基板を製品率を確保して提供する。単結晶の基板10であって、前記基板10は、その内部に当該基板10の結晶方位とは異なる結晶方位を有する周期的構造が形成された改質層14を有し、前記周期的構造は連結されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)