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Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/115353 International Application No.: PCT/JP2013/052327
Publication Date: 08.08.2013 International Filing Date: 01.02.2013
Chapter 2 Demand Filed: 12.06.2013
IPC:
B23K 26/40 (2006.01) ,B23K 26/06 (2006.01) ,B23K 26/38 (2006.01) ,B28D 5/00 (2006.01) ,H01L 21/304 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
36
Removing material
40
taking account of the properties of the material involved
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
02
Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06
Shaping the laser beam, e.g. by masks or multi-focusing
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
36
Removing material
38
by boring or cutting
B PERFORMING OPERATIONS; TRANSPORTING
28
WORKING CEMENT, CLAY, OR STONE
D
WORKING STONE OR STONE-LIKE MATERIALS
5
Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants: SHIN-ETSU POLYMER CO., LTD.[JP/JP]; 1-9, Kanda-Sudacho, Chiyoda-ku, Tokyo 1010041, JP
NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY[JP/JP]; 255, Shimo-Okubo, Sakura-ku, Saitama-shi, Saitama 3388570, JP
Inventors: MATSUO, Rika; JP
SUZUKI, Hideki; JP
KUNISHI, Yosuke; JP
IKENO, Junichi; JP
Agent: MIYOSHI, Hidekazu; Toranomon Kotohira Tower, 2-8, Toranomon 1-chome, Minato-ku, Tokyo 1050001, JP
Priority Data:
2012-02006701.02.2012JP
Title (EN) SUBSTRATE AND SUBSTRATE PROCESSING METHOD
(FR) SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板及び基板加工方法
Abstract:
(EN) A thin silicon substrate is provided for which a product rate is maintained. A monocrystalline substrate (10) having a modified layer (14) having periodic structures having a different crystal orientation to the crystal orientation of the substrate (10) formed therein, said periodic structures being connected.
(FR) L'invention concerne un substrat de silicium mince pour lequel un taux de produit est maintenu. L'invention concerne un substrat monocristallin (10) comprenant une couche modifiée (14) comprenant des structures périodiques présentant une orientation cristalline différente de l'orientation cristalline du substrat (10) formé à l'intérieur, lesdites structures périodiques étant raccordées.
(JA)  薄いシリコン基板を製品率を確保して提供する。単結晶の基板10であって、前記基板10は、その内部に当該基板10の結晶方位とは異なる結晶方位を有する周期的構造が形成された改質層14を有し、前記周期的構造は連結されている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)