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1. (WO2013114743) SILICON CARBIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2013/114743    International Application No.:    PCT/JP2012/082493
Publication Date: Fri Aug 09 01:59:59 CEST 2013 International Filing Date: Sat Dec 15 00:59:59 CET 2012
IPC: H01L 29/78
H01L 21/336
H01L 29/12
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
Inventors: SHIMAZU, Mitsuru
嶋津 充
HIYOSHI, Toru
日吉 透
WADA, Keiji
和田 圭司
MASUDA, Takeyoshi
増田 健良
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE
Abstract:
A silicon carbide semiconductor device (100) comprises an insulator film (126), and a silicon carbide layer (109) further comprising a surface which is covered with the insulator film (126). The surface includes a first region (R1). The first region (R1) has at least partially a first plane direction. The first plane direction is any of a (0-33-8) plane, a (30-3-8) plane, a (-330-8) plane, a (03-3-8) plane, a (-303-8) plane, or a (3-30-8) plane.