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1. (WO2013114562) GLASS COMPOSITION FOR SEMICONDUCTOR JUNCTION PROTECTION, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/114562    International Application No.:    PCT/JP2012/052108
Publication Date: 08.08.2013 International Filing Date: 31.01.2012
IPC:
H01L 21/316 (2006.01), C03C 3/093 (2006.01), H01L 21/329 (2006.01), H01L 29/06 (2006.01), H01L 29/47 (2006.01), H01L 29/861 (2006.01), H01L 29/872 (2006.01)
Applicants: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. [JP/JP]; 2-1, Otemachi 2-chome, Chiyoda-ku, Tokyo 1000004 (JP) (For All Designated States Except US).
MUYARI, Koya [JP/JP]; (JP) (For US Only).
ITO, Koji [JP/JP]; (JP) (For US Only).
OGASAWARA, Atsushi [JP/JP]; (JP) (For US Only).
ITO, Kazuhiko [JP/JP]; (JP) (For US Only)
Inventors: MUYARI, Koya; (JP).
ITO, Koji; (JP).
OGASAWARA, Atsushi; (JP).
ITO, Kazuhiko; (JP)
Agent: MATSUO, Nobutaka; MEBUKI Intellectual Property Services, 9862-60, Ochiai, Fujimi-machi, Suwa-gun, Nagano 3990214 (JP)
Priority Data:
Title (EN) GLASS COMPOSITION FOR SEMICONDUCTOR JUNCTION PROTECTION, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
(FR) COMPOSITION DE VERRE POUR LA PROTECTION DE JONCTIONS DE SEMI-CONDUCTEURS, PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS, ET DISPOSITIF À SEMI-CONDUCTEURS
(JA) 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置
Abstract: front page image
(EN)Provided is a glass composition for semiconductor junction protection that is characterized by including at least two alkali earth metal oxides from among SiO2, B2O3, Al2O3, ZnO, CaO, MgO, and BaO, and by substantially not including Pb, P, As, Sb, Li, Na, or K. The glass composition for semiconductor junction protection of the present invention makes it possible to use a glass material that does not contain lead to produce a high breakdown voltage semiconductor device like that produced in the prior art by using a "glass material comprising mainly lead silicate". In addition, the value of the average linear expansion coefficient occurring in the range of 50-550° C is close to the value of the linear expansion coefficient of silicon because the glass composition of the present invention includes at least two alkali earth metal oxides from among CaO, MgO, and BaO, thereby making it possible to produce a highly reliable semiconductor device.
(FR)L'invention concerne une composition de verre destinée à la protection de jonctions de semi-conducteurs, qui se caractérise en ce qu'elle comprend au moins deux oxydes métalliques alcalino-terreux choisis parmi SiO2, B2O3, Al2O3, ZnO, CaO, MgO et BaO, et en ce qu'elle est sensiblement exempte de Pb, P, As, Sb, Li, Na ou K. La composition de verre de l'invention permet d'utiliser un matériau de verre exempt de plomb pour fabriquer un dispositif à semi-conducteurs à tension disruptive élevée similaire à celui fabriqué dans l'art antérieur avec un "matériau de verre comprenant principalement du silicate de plomb" En outre, la valeur du coefficient de dilatation linéaire moyenne intervenant dans la plage comprise entre 50 et 550°C est proche de la valeur du coefficient de dilatation linéaire du silicium, du fait que la composition de verre de l'invention comprend au moins deux oxydes métalliques alcalino-terreux choisis parmi CaO, MgO et BaO, ce qui permet de fabriquer un dispositif à semi-conducteurs hautement fiable.
(JA) 少なくともSiOと、Bと、Alと、ZnOと、CaO、MgO及びBaOのうち少なくとも2つのアルカリ土類金属の酸化物とを含有し、かつ、Pbと、Pと、Asと、Sbと、Liと、Naと、Kとを実質的に含有しないことを特徴とする半導体接合保護用ガラス組成物。 本発明の半導体接合保護用ガラス組成物によれば、鉛を含まないガラス材料を用いて、従来の「珪酸鉛を主成分としたガラス材料」を用いた場合と同様に、高耐圧の半導体装置を製造することが可能となる。また、CaO、MgO及びBaOのうち少なくとも2つのアルカリ土類金属の酸化物を含有することから、50℃~550℃における平均線膨張率がシリコンの線膨張率に近い値を有するようになり、高信頼性の半導体装置を製造することが可能となる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)