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1. (WO2013112615) MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/112615    International Application No.:    PCT/US2013/022789
Publication Date: 01.08.2013 International Filing Date: 23.01.2013
Chapter 2 Demand Filed:    25.11.2013    
IPC:
G11C 11/15 (2006.01), G11C 11/16 (2006.01), H01L 43/08 (2006.01), H01L 43/12 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; Attn: International IP Administration 5775 Morehouse Drive San Diego, California 92121 (US) (For All Designated States Except US)
Inventors: WU, Wenqing; (US).
LI, Sean; (US).
ZHU, Xiaochun; (US).
MADALA, Raghu Sagar; (US).
KANG, Seung H.; (US).
YUEN, Kendrick H.; (US)
Agent: PAULEY, Nicholas J.; 5775 Morehouse Drive San Diego, California 92121 (US)
Priority Data:
13/356,530 23.01.2012 US
Title (EN) MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING SAME
(FR) MÉMOIRE DE JONCTION À EFFET TUNNEL MAGNÉTIQUE MULTI-BIT ET SON PROCÉDÉ DE FORMATION
Abstract: front page image
(EN)A spin-torque transfer (STT) magnetic tunnel junction (MTJ) memory includes a unitary fixed magnetic layer, a magnetic barrier layer on the unitary fixed magnetic layer, a free magnetic layer having a plurality of free magnetic islands on the magnetic barrier layer, and a cap layer overlying the free magnetic layer. Also a method of forming an STT-MTJ memory.
(FR)La présente invention concerne une mémoire de jonction à effet tunnel magnétique (MTJ) à transfert de couple de spin (STT) qui comprend une couche magnétique fixe unitaire, une couche barrière magnétique sur la couche magnétique fixe unitaire, une couche magnétique libre comportant une pluralité d'îles magnétiques libres sur la couche barrière magnétique, et une couche d'encapsulation recouvrant la couche magnétique libre. L'invention concerne également un procédé de formation d'une mémoire STT-MTJ.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)