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Machine translation
1. (WO2013112291) NON-VOLATILE MEMORY CELL CONTAINING A NANO-RAIL ELECTRODE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/112291    International Application No.:    PCT/US2013/020948
Publication Date: 01.08.2013 International Filing Date: 10.01.2013
IPC:
H01L 29/41 (2006.01), B82Y 10/00 (2011.01), B82Y 40/00 (2011.01), H01L 27/10 (2006.01), H01L 45/00 (2006.01), H01L 27/24 (2006.01)
Applicants: SANDISK 3D LLC [US/US]; 601 McCarthy Boulevard Milpitas, California 95035 (US)
Inventors: KAI, James K.; (US).
CHIEN, Henry; (US).
MATAMIS, George; (US).
PURUYATH, Vinod R.; (US)
Agent: RADOMSKY, Leon; The Marbury Law Group, PLLC 11800 Sunrise Valley Drive 15th Floor Reston, Virginia 20191 (US)
Priority Data:
13/356,047 23.01.2012 US
Title (EN) NON-VOLATILE MEMORY CELL CONTAINING A NANO-RAIL ELECTRODE
(FR) CELLULE DE MÉMOIRE NON VOLATILE CONTENANT UNE ÉLECTRODE NANO-RAIL
Abstract: front page image
(EN)A non-volatile memory device includes a plurality of non-volatile memory cells (1). Each of the non-volatile memory cells includes a first electrode (101), a diode steering element (110), a storage element (118) located in series with the diode steering element, a second electrode (100), and a nano-rail electrode (205, 202) having a width of 15 nm or less, between the diode (110) and the storage element (118).
(FR)L'invention concerne un dispositif à mémoire non volatile, qui comprend une pluralité de cellules de mémoire non volatile (1). Chacune des cellules de mémoire non volatile comprend une première électrode (101), un élément de direction de diode (110), un élément de stockage (118) situé en série avec l'élément de direction de diode, une seconde électrode (100) et une électrode nano-rail (205, 202) ayant une largeur de 15 nm ou moins, entre la diode (110) et l'élément de stockage (118).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)