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1. (WO2013112231) METHOD OF PRODUCING MONOCRYSTALLINE SILICON

Pub. No.:    WO/2013/112231    International Application No.:    PCT/US2012/067917
Publication Date: Fri Aug 02 01:59:59 CEST 2013 International Filing Date: Thu Dec 06 00:59:59 CET 2012
IPC: C30B 11/00
C30B 29/06
Applicants: GTAT CORPORATION
Inventors: TURCHETTI, Scott, J.
DUANMU, Ning
Title: METHOD OF PRODUCING MONOCRYSTALLINE SILICON
Abstract:
A method of producing a crystalline product comprising a high percentage by volume monocrystalline material in a crystal growth apparatus is disclosed. The method comprises the steps of providing a crucible comprising feedstock and at least one monocrystalline seed, melting the feedstock without substantially melting the monocrystalline seed under controlled conditions, and forming the crystalline product by solidification of the melt also under controlled conditions. The resulting crystalline product comprises greater than 50% by volume monocrystalline material.