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1. (WO2013111907) ETCHING METHOD AND ETCHING LIQUID USED THEREIN
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2013/111907 International Application No.: PCT/JP2013/051936
Publication Date: 01.08.2013 International Filing Date: 22.01.2013
IPC:
C23F 1/26 (2006.01) ,H05K 3/06 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
F
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
1
Etching metallic material by chemical means
10
Etching compositions
14
Aqueous compositions
16
Acidic compositions
26
for etching refractory metals
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
02
in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
06
the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
Applicants: FUJIFILM CORPORATION[JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors: MIZUTANI, Atsushi; JP
TOMEBA, Hisamitsu; JP
TAKAHASHI, Kazutaka; JP
INABA, Tadashi; JP
Agent: IIDA, Toshizo; ISHII Bldg. 3F, 1-10, Shimbashi 3-chome, Minato-ku, Tokyo 1050004, JP
Priority Data:
2012-01331025.01.2012JP
Title (EN) ETCHING METHOD AND ETCHING LIQUID USED THEREIN
(FR) PROCÉDÉ DE GRAVURE ET LIQUIDE DE GRAVURE UTILISÉ DANS CELUI-CI
Abstract:
(EN) An etching method having the step of: applying an etching liquid to a substrate, the etching liquid containing: a fluorine ion, a nitrogen-containing compound having at least 2 of nitrogen-containing structural units, and water, the etching liquid having a pH of being adjusted to 5 or less; and etching a titanium compound in the substrate.
(FR) L'invention concerne un procédé de gravure présentant l'étape comprenant : l'application d'un liquide de gravure sur un substrat, le liquide de gravure contenant : un ion de fluor, un composé contenant de l'azote comportant au moins 2 unités structurelles contenant de l'azote, et de l'eau, le liquide de gravure présentant un pH ajusté à 5 ou moins ; et la gravure d'un composé de titane dans le substrat.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)