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|1. (WO2013111474) MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING DEVICE|
|Applicants:||TOKYO ELECTRON LIMITED
|Title:||MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING DEVICE|
A microwave emission mechanism (43) comprises: a transmission path (44) that transmits a microwave; and an antenna section (45) that emits the microwave transmitted on the microwave transmission path (44), said microwave being emitted within a chamber (1). The antenna section (45) comprises an antenna (81), a dielectric member (110b) and a closed circuit (C). A slot (131) that emits the microwave is formed in said antenna (81). Said dielectric member (110b): is penetrated by the microwave emitted from the antenna (81); and has a surface wave formed in the surface thereof. A surface current and a displacement current flow in said closed circuit (C), which contains at least: an inner wall of the slot (131); and a surface and the inner portion of the dielectric member (110b). The length of the closed circuit (C) is nλ0 ± δ (where n is a positive integer and δ is a fine-tuning component (that can be 0)), when the wavelength of the microwave is λ0.