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1. (WO2013111474) MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING DEVICE

Pub. No.:    WO/2013/111474    International Application No.:    PCT/JP2012/082496
Publication Date: Fri Aug 02 01:59:59 CEST 2013 International Filing Date: Sat Dec 15 00:59:59 CET 2012
IPC: H05H 1/46
H01L 21/205
H01L 21/3065
H01L 21/31
Applicants: TOKYO ELECTRON LIMITED
東京エレクトロン株式会社
Inventors: IKEDA Taro
池田 太郎
MIYASHITA Hiroyuki
宮下 大幸
OSADA Yuki
長田 勇輝
FUJINO Yutaka
藤野 豊
KOMATSU Tomohito
小松 智仁
Title: MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING DEVICE
Abstract:
A microwave emission mechanism (43) comprises: a transmission path (44) that transmits a microwave; and an antenna section (45) that emits the microwave transmitted on the microwave transmission path (44), said microwave being emitted within a chamber (1). The antenna section (45) comprises an antenna (81), a dielectric member (110b) and a closed circuit (C). A slot (131) that emits the microwave is formed in said antenna (81). Said dielectric member (110b): is penetrated by the microwave emitted from the antenna (81); and has a surface wave formed in the surface thereof. A surface current and a displacement current flow in said closed circuit (C), which contains at least: an inner wall of the slot (131); and a surface and the inner portion of the dielectric member (110b). The length of the closed circuit (C) is nλ0 ± δ (where n is a positive integer and δ is a fine-tuning component (that can be 0)), when the wavelength of the microwave is λ0.