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1. (WO2013111463) MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE COMPRISING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, SOLAR CELL ELEMENT, AND METHOD OF MANUFACTURING SOLAR CELL ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/111463    International Application No.:    PCT/JP2012/082099
Publication Date: 01.08.2013 International Filing Date: 11.12.2012
IPC:
H01L 23/29 (2006.01), H01L 21/312 (2006.01), H01L 23/31 (2006.01), H01L 31/04 (2006.01)
Applicants: HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 9-2, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1006606 (JP)
Inventors: ORITA, Akihiro; (JP).
YOSHIDA, Masato; (JP).
NOJIRI, Takeshi; (JP).
KURATA, Yasushi; (JP).
TANAKA, Tooru; (JP).
ADACHI, Shuichiro; (JP).
HAYASAKA, Tsuyoshi; (JP)
Agent: KOBAYASHI, Miki; TAIYO, NAKAJIMA & KATO, Seventh Floor, HK-Shinjuku Bldg., 3-17, Shinjuku 4-chome, Shinjuku-ku, Tokyo 1600022 (JP)
Priority Data:
2012-011401 23.01.2012 JP
Title (EN) MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE COMPRISING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, SOLAR CELL ELEMENT, AND METHOD OF MANUFACTURING SOLAR CELL ELEMENT
(FR) MATÉRIAU DE FORMATION D'UN FILM DE PASSIVATION POUR UN SUBSTRAT SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION DE SUBSTRAT SEMI-CONDUCTEUR COMPRENANT UN FILM DE PASSIVATION POUR SUBSTRAT SEMI-CONDUCTEUR, ÉLÉMENT DE CELLULE SOLAIRE, ET PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE CELLULE SOLAIRE
(JA) 半導体基板用パッシベーション膜形成用材料、半導体基板用パッシベーション膜を有する半導体基板の製造方法、太陽電池素子及び太陽電池素子の製造方法
Abstract: front page image
(EN)The present invention provides a material for forming a passivation film for a semiconductor substrate that comprises a compound further comprising an acidic group. With this invention, a passivation film for a semiconductor substrate that has an excellent passivation effect can be formed by an easy method.
(FR)La présente invention concerne un matériau conçu pour former un film de passivation pour un substrat semi-conducteur, comprenant un composé comprenant en outre un groupe acide. L'invention permet de former par un procédé aisé un film de passivation présentant un excellent effet de passivation pour un substrat semi-conducteur.
(JA) 本発明は、酸性基を有する化合物を含む半導体基板用パッシベーション膜形成用材料を提供する。本発明によれば、簡便な手法で優れたパッシベーション効果を有する半導体基板用パッシベーション膜を形成することができる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)