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1. (WO2013110664) OVERLAY MODEL FOR ALIGNING AND EXPOSING SEMICONDUCTOR WAFERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/110664    International Application No.:    PCT/EP2013/051249
Publication Date: 01.08.2013 International Filing Date: 23.01.2013
IPC:
H01L 21/68 (2006.01), G03F 7/20 (2006.01), G03F 9/00 (2006.01)
Applicants: QONIAC GMBH [DE/DE]; Fetscherstraße 72 01307 Dresden (DE)
Inventors: HABETS, Boris; (DE)
Agent: HARRISON, Robert; Herzogspitalstraße 10a 80331 Munich (DE)
Priority Data:
61/590,665 25.01.2012 US
12152483.9 25.01.2012 EP
Title (EN) OVERLAY MODEL FOR ALIGNING AND EXPOSING SEMICONDUCTOR WAFERS
(FR) MODÈLE DE REVÊTEMENT POUR ALIGNER ET EXPOSER DES PLAQUETTES DE SEMI-CONDUCTEURS
Abstract: front page image
(EN)A method of calculating an overlay correction model in an apparatus for the fabrication of a wafer comprising a structural pattern on a substrate and having first overlay marks generated in a first layer and second overlay marks in a second layer. Overlay deviations of a subset of overlay marks are measured providing a subset of overlay model parameters. For a plurality of overlay mark positions the overlay residuals are estimated using the subset of overlay model parameters. A set of process correction parameters derived from the overlay residuals is provided for the plurality of overlay mark positions. The subset of overlay marks is selected in dependence of the distance to the position of the exposure field, and the selected overlay marks are weighted based on the distance between the overlay mark position and the exposure field.
(FR)L'invention concerne un procédé de calcul d'un modèle de correction de revêtement dans une unité pour la fabrication d'une plaquette. Le procédé comprend la mesure de déviations de revêtement d'un sous-ensemble de premières marques de revêtement et de secondes marques de revêtement en déterminant les différences entre le sous-ensemble de premières marques de revêtement générées dans la première couche et le sous-ensemble correspondant de secondes marques de revêtement générées dans la seconde couche.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)