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1. WO2013104460 - ELECTRONIC COMPONENT HAVING A CORROSION-PROTECTED BONDING CONNECTION AND METHOD FOR PRODUCING THE COMPONENT

Publication Number WO/2013/104460
Publication Date 18.07.2013
International Application No. PCT/EP2012/073971
International Filing Date 29.11.2012
IPC
H01L 23/053 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape
053the container being a hollow construction and having an insulating base as a mounting for the semiconductor body
H01L 23/26 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
16Fillings or auxiliary members in containers, e.g. centering rings
18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
26including materials for absorbing or reacting with moisture or other undesired substances
CPC
H01L 21/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
H01L 2224/05624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05617the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
05624Aluminium [Al] as principal constituent
H01L 2224/45015
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
4501Shape
45012Cross-sectional shape
45015being circular
H01L 2224/45124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45117the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
45124Aluminium (Al) as principal constituent
H01L 2224/45144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
45099Material
451with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
45138the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
45144Gold (Au) as principal constituent
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
Applicants
  • ROBERT BOSCH GMBH [DE]/[DE] (AllExceptUS)
  • DUERR, Johannes [DE]/[DE] (US)
  • BECKER, Rolf [DE]/[DE] (US)
  • LAMERS, Sven [DE]/[DE] (US)
  • MUELLER, Lutz [DE]/[DE] (US)
  • BEZ, Fabian [DE]/[DE] (US)
  • SCHLECHT, Michael [DE]/[DE] (US)
Inventors
  • DUERR, Johannes
  • BECKER, Rolf
  • LAMERS, Sven
  • MUELLER, Lutz
  • BEZ, Fabian
  • SCHLECHT, Michael
Common Representative
  • ROBERT BOSCH GMBH
Priority Data
10 2012 200 273.111.01.2012DE
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) ELEKTRONISCHES BAUTEIL MIT KORROSIONSGESCHÜTZTER BONDVERBINDUNG UND VERFAHREN ZUR HERSTELLUNG DES BAUTEILS
(EN) ELECTRONIC COMPONENT HAVING A CORROSION-PROTECTED BONDING CONNECTION AND METHOD FOR PRODUCING THE COMPONENT
(FR) COMPOSANT ÉLECTRONIQUE DOTÉ D'UNE LIAISON DE CONNEXION PROTÉGÉE CONTRE LA CORROSION ET PROCÉDÉ DE FABRICATION DU COMPOSANT
Abstract
(DE) Die Erfindung betrifft ein elektronisches Bauteil (1) mit korrosionsgeschützter Bondverbindung und ein Verfahren zur Herstellung desselben. Dazu weist das elektronische Bauteil (1) mindestens einen Halbleiterchip (3) auf einem Substrat (4) auf. Ferner ist eine korrosionsgefährdete Bondverbindung auf dem Halbleiterchip (3) vorgesehen. Als Einkapselung des mindestens einen Halbleiterchips (3) und der mindestens einen korrosionsgefährdeten Bondverbindung sind diese von einem hermetisch einschließenden Gehäuse (5) umgeben. Die hermetisch eingeschlossene Bondverbindung ist eine Bonddrahtverbindung (2), die vollständig und das Substrat (4) mindestens teilweise in das Gehäuse (5) mit eingeschlossen sind. Das Substrat (4) weist in dem Gehäuse (5) mindestens ein oberflächenmontiertes hydrolyseempfindliches Bauelement (6) auf.
(EN) The invention relates to an electronic component (1) having a corrosion-protected bonding connection and a method for producing said component. For this purpose the electronic component (1) has at least one semiconductor chip (3) on a substrate (4). Moreover, a bonding connection at risk of corrosion is provided on the semiconductor chip (3). For encapsulation of the at least one semiconductor chip (3) and the at least one bonding connection at risk of corrosion, said semiconductor chip and bonding connection are surrounded by a hermetically sealing housing (5). The hermetically sealed bonding connection is a bonding wire connection (2) which is fully enclosed in the housing (5), in which the substrate (4) is at least partially enclosed. The substrate (4) has at least one surface-mounted hydrolysis-sensitive component (6) in the housing (5).
(FR) La présente invention concerne un composant électronique (1) doté d'une liaison de connexion protégée contre la corrosion et un procédé de fabrication de ce composant. À cet effet, le composant électronique (1) comporte au moins une puce à semi-conducteur (3) sur un substrat (4). Sur la puce à semi-conducteur (3) est en outre prévue une liaison de connexion menacée de corrosion. Pour encapsuler l'au moins une puce à semi-conducteur (3) et l'au moins une liaison de connexion menacée de corrosion, celles-ci sont entourées d'un boîtier (5) qui les enferme hermétiquement. La liaison de connexion enfermée hermétiquement est une liaison de connexion par fil (2), ladite liaison de connexion par fil étant enfermée entièrement dans le boîtier (5) et le substrat (4), au moins en partie. Le substrat (4) comporte, dans le boîtier (5), au moins un composant (6) sensible à l'hydrolyse et monté sur la surface.
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