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1. WO2013099517 - CZTS-BASED COMPOUND SEMICONDUCTOR AND PHOTOELECTRIC TRANSDUCER

Publication Number WO/2013/099517
Publication Date 04.07.2013
International Application No. PCT/JP2012/081060
International Filing Date 30.11.2012
IPC
C01G 19/00 2006.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
19Compounds of tin
H01L 31/04 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
C01G 19/006
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
19Compounds of tin
006Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
C01P 2002/72
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002Crystal-structural characteristics
70defined by measured X-ray, neutron or electron diffraction data
72by d-values or two theta-values, e.g. as X-ray diagram
C01P 2002/84
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2002Crystal-structural characteristics
80defined by measured data other than those specified in group C01P2002/70
84by UV- or VIS- data
H01L 21/02557
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
02557Sulfides
H01L 21/02568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
H01L 31/0326
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
032including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
0326comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
Applicants
  • トヨタ自動車株式会社 TOYOTA JIDOSHA KABUSHIKI KAISHA [JP]/[JP]
  • 一般財団法人ファインセラミックスセンター JAPAN FINE CERAMICS CENTER [JP]/[JP]
Inventors
  • 酒井 武信 SAKAI, Takenobu
  • 粟野 宏基 AWANO, Hiroki
  • 前川 諒介 MAEKAWA, Ryosuke
  • 上田 太郎 UEDA, Taro
  • 高橋 誠治 TAKAHASHI, Seiji
Agents
  • 山本 典輝 YAMAMOTO, Noriaki
Priority Data
2011-28862528.12.2011JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) CZTS-BASED COMPOUND SEMICONDUCTOR AND PHOTOELECTRIC TRANSDUCER
(FR) SEMI-CONDUCTEUR COMPOSÉ À BASE DE CZTS ET TRANSDUCTEUR PHOTOÉLECTRIQUE CORRESPONDANT
(JA) CZTS系化合物半導体及び光電変換素子
Abstract
(EN) The main purpose of the present invention is to provide a CZTS-based compound semiconductor which has a band gap different from that of a conventional CZTS-based compound semiconductor and a photoelectric transducer using the same. The present invention pertains to: a CZTS-based compound semiconductor in which the ratio of the number of moles of Cu to the total number of moles of Cu, Zn and Sn is larger than that in Cu2ZnSnS4; and a photoelectric transducer using the CZTS-based compound semiconductor.
(FR) La présente invention a pour objet principal un semi-conducteur composé à base de CZTS, qui a une largeur de bande interdite différente de celle d'un semi-conducteur composé à base de CZTS, et un transducteur photoélectrique l'utilisant. La présente invention porte sur : un semi-conducteur composé à base de CZTS dans lequel le rapport du nombre de moles de Cu au nombre total de moles de Cu, Zn et Sn est plus grand que dans Cu2ZnSnS4; et un transducteur photoélectrique utilisant le semi-conducteur composé à base de CZTS.
(JA) 本発明は、従来のCZTS系化合物半導体とはバンドギャップが異なるCZTS系化合物半導体及びこれを用いた光電変換素子を提供することを主目的とする。 本発明は、CuZnSnSを構成するCu、Zn、及び、Snの合計モル数に占めるCuのモル数の割合よりも、Cuのモル数の割合が大きいCZTS系化合物半導体とし、該CZTS系化合物半導体を用いた光電変換素子とする。
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