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1. WO2013099460 - COMPOSITION FOR ORGANIC SEMICONDUCTOR INSULATING FILMS, AND ORGANIC SEMICONDUCTOR INSULATING FILM

Publication Number WO/2013/099460
Publication Date 04.07.2013
International Application No. PCT/JP2012/079426
International Filing Date 13.11.2012
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
C08L 83/04 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
C08L 101/00 2006.1
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
101Compositions of unspecified macromolecular compounds
H01L 51/05 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H01L 51/30 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30Selection of materials
CPC
C08G 77/045
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
045containing less than 25 silicon atoms
C08G 77/14
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
14containing silicon bound to oxygen-containing groups
C08G 77/20
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
20containing silicon bound to unsaturated aliphatic groups
C08L 83/04
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
04Polysiloxanes
H01L 51/0094
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0094Silicon-containing organic semiconductors
H01L 51/052
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
0512insulated gate field effect transistors
0516characterised by the gate dielectric
052the gate dielectric comprising only organic materials
Applicants
  • 東亞合成株式会社 TOAGOSEI CO., LTD. [JP]/[JP]
Inventors
  • 鈴木 浩 SUZUKI Hiroshi
  • 北村 昭憲 KITAMURA Akinori
  • 濱田 崇 HAMADA Takashi
Agents
  • 小島 清路 KOJIMA Seiji
Priority Data
2011-28436326.12.2011JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITION FOR ORGANIC SEMICONDUCTOR INSULATING FILMS, AND ORGANIC SEMICONDUCTOR INSULATING FILM
(FR) COMPOSITION POUR COUCHES ISOLANTES DE SEMI-CONDUCTEUR ORGANIQUE ET COUCHE ISOLANTE DE SEMI-CONDUCTEUR ORGANIQUE
(JA) 有機半導体絶縁膜用組成物及び有機半導体絶縁膜
Abstract
(EN) The purpose of the present invention is to provide: a composition for organic semiconductor insulating films, which is capable of forming an insulating film that exhibits excellent hydrophobicity and smoothness of the film surface, while having excellent electrical stability; and an organic semiconductor insulating film which uses the composition for organic semiconductor insulating films. A composition for organic semiconductor insulating films of the present invention contains a polysiloxane and an organic polymer compound. The polysiloxane is composed of a polyhedral silsesquioxane having an oxetanyl group and/or a silicon compound represented by formula (1) and having an oxetanyl group. In formula (1), each of R1-R3 independently represents a monovalent organic group (provided that at least one of R1-R3 is a monovalent organic group having an oxetanyl group); and each of v, w, x and y independently represents 0 or a positive number (provided that w and at least one of v, x and y are positive numbers).
(FR) La présente invention a pour objet : une composition pour des couches isolantes de semi-conducteur organique, qui permet de former une couche isolante qui présente un excellent caractère hydrophobe et un excellent caractère lisse de la surface de la couche, tout en ayant une excellente stabilité électrique ; et une couche isolante de semi-conducteur organique qui utilise la composition pour des couches isolantes de semi-conducteur organique. La composition pour des couches isolantes de semi-conducteur organique de la présente invention contient un polysiloxane et un composé polymère organique. Le polysiloxane est composé d'un silsesquioxane polyédrique ayant un groupe oxétanyle et/ou d'un composé du silicium représenté par la formule (1) et ayant un groupe oxétanyle. Dans la formule (1), chacun de R1-R3 représente indépendamment un groupe organique monovalent (à condition qu'au moins l'un de R1-R3 soit un groupe organique monovalent ayant un groupe oxétanyle) ; et chacun de v, w, x et y représente indépendamment 0 ou un nombre positif (à condition que w et au moins l'un de v, x et y soient des nombres positifs).
(JA)  本発明の目的は、膜表面の疎水性及び平滑性に優れており且つ電気安定性に優れる絶縁膜を形成可能な有機半導体絶縁膜用組成物、及びそれを用いた有機半導体絶縁膜を提供することである。本発明の有機半導体絶縁膜用組成物は、ポリシロキサンと、有機高分子化合物と、を含有するものであって、ポリシロキサンは、オキセタニル基を有するカゴ型シルセスキオキサン、及び下式で表されるオキセタニル基を有するケイ素化合物のうちの少なくとも一方である。尚、下式のR~Rはそれぞれ独立に、一価の有機基を表す(但し、R~Rのうちの少なくとも1つは、オキセタニル基を有する一価の有機基である。)。v、w、x及びyはそれぞれ独立に、0又は正の数を表す(但し、v、x及びyのうちの少なくとも1つと、wは正の数である。)。
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