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1. WO2013097307 - THIN-FILM-TRANSISTOR LIQUID CRYSTAL DISPLAY DEVICE, SUBSTRATE, AND MANUFACTURING METHOD

Publication Number WO/2013/097307
Publication Date 04.07.2013
International Application No. PCT/CN2012/070367
International Filing Date 16.01.2012
IPC
G02F 1/1362 2006.1
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 29/41733
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
41725Source or drain electrodes for field effect devices
41733for thin film transistors with insulated gate
Applicants
  • 深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN] (AllExceptUS)
  • 陈政鸿 CHEN, Cheng-hung [CN]/[CN] (UsOnly)
Inventors
  • 陈政鸿 CHEN, Cheng-hung
Agents
  • 深圳市威世博知识产权代理事务所(普通合伙) CHINA WISPRO INTELLECTUAL PROPERTY LLP.
Priority Data
201110439847.626.12.2011CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN-FILM-TRANSISTOR LIQUID CRYSTAL DISPLAY DEVICE, SUBSTRATE, AND MANUFACTURING METHOD
(FR) DISPOSITIF D'AFFICHAGE À CRISTAUX LIQUIDES ET À TRANSISTOR EN COUCHES MINCES, SUBSTRAT, ET PROCÉDÉ DE FABRICATION
(ZH) 一种薄膜晶体管液晶显示器、基板及制造方法
Abstract
(EN) A thin-film-transistor liquid crystal display device comprising a substrate (41), and formed on the substrate, a signal line (42), a scan line (43), a pixel electrode (44), and a thin-film transistor (100). The signal line (42) and the scan line (43) are intersectingly arranged. The pixel electrode (44) is arranged within a pixel display region formed by the surrounding and intersecting signal line (42) and scan line (43). The thin-film transistor (100) comprises a gate electrode (45), a source electrode (46), and a drain electrode (47). The gate electrode (45) is electrically connected to the scan line (43). The drain electrode (47) is electrically connected to the signal line (42). The source electrode (46) is arranged at the intersection of the signal line and the scan line and is electrically connected to the pixel electrode (44). By using the method, the present invention allows for a large reduction in the amount of space that is occupied in the region of the pixel electrode (44), for an increased aperture ratio of the pixel electrode (44), and for a large reduction of the impact on the alignment of liquid crystal molecules, thus reducing the asymmetry of a pixel quadrant and improving picture quality.
(FR) L'invention concerne un dispositif d'affichage à cristaux liquides et à transistor en couches minces comprenant un substrat (41) et, formés sur le substrat, une ligne de signal (42), une ligne de balayage (43), une électrode de pixel (44) et un transistor en couches minces (100). La ligne de signal (42) et la ligne de balayage (43) sont disposées de manière à se croiser. L'électrode de pixel (44) est disposée dans une région d'affichage de pixel formée par la ligne de signal (42) et la ligne de balayage (43) qui l'entourent et se croisent. Le transistor en couches minces (100) comprend une électrode de grille (45), une électrode de source (46), et une électrode de drain (47). L'électrode de grille (45) est connectée électriquement à la ligne de balayage (43). L'électrode de drain (47) est connectée électriquement à la ligne de signal (42). L'électrode de source (46) est disposée au croisement de la ligne de signal et de la ligne de balayage et est électriquement connectée à l'électrode de pixel (44). Par utilisation du procédé, la présente invention permet de réduire fortement la zone qui est déjà remplie dans la région de l'électrode de pixel (44), pour un rapport d'ouverture augmenté de l'électrode de pixel (44), et pour un impact fortement réduit sur l'alignement des molécules de cristaux liquides, réduisant ainsi l'asymétrie d'un quadrant de pixel et améliorant la qualité d'image.
(ZH) 一种薄膜晶体管液晶显示器,包括基板(41)、及形成于所述基板上的信号线(42)、扫描线(43)、像素电极(44)以及薄膜晶体管(100);所述信号线(42)和扫描线(43)交叉设置,所述像素电极(44)位于信号线(42)和扫描线(43)交叉围绕所形成的像素显示区域内;所述薄膜晶体管(100)包括栅极(45)、源极(46)以及漏极(47);所述栅极(45)与扫描线(43)电连接,所述漏极(47)与信号线(42)电连接,所述源极(46)位于信号线和扫描线交叉位置,并且与像素电极(44)电连接。通过上述方式,本发明能够大幅减少挤占像素电极(44)区域的面积,能够提高像素电极(44)的开口率;大幅减少对液晶分子配向的影响,从而降低像素象限的不对称性、改善画面品质。
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