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1. WO2013095438 - FULLY ENCAPSULATED CONDUCTIVE LINES

Publication Number WO/2013/095438
Publication Date 27.06.2013
International Application No. PCT/US2011/066495
International Filing Date 21.12.2011
IPC
H01L 21/28 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 21/31 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
CPC
H01L 21/76841
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
H01L 21/76849
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76843formed in openings in a dielectric
76849the layer being positioned on top of the main fill metal
H01L 21/76883
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
76883Post-treatment or after-treatment of the conductive material
H01L 23/5223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
5222Capacitive arrangements or effects of, or between wiring layers
5223Capacitor integral with wiring layers
H01L 23/53238
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
52Arrangements for conducting electric current within the device in operation from one component to another ; , i.e. interconnections, e.g. wires, lead frames
522including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532characterised by the materials
53204Conductive materials
53209based on metals, e.g. alloys, metal silicides
53228the principal metal being copper
53238Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
H01L 27/0611
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
Applicants
  • INTEL CORPORATION [US]/[US] (AllExceptUS)
  • LINDERT, Nick [US]/[US] (UsOnly)
  • SINGH, Kanwal Jit [IN]/[US] (UsOnly)
  • LEE, Byung-Chan [US]/[US] (UsOnly)
Inventors
  • LINDERT, Nick
  • SINGH, Kanwal Jit
  • LEE, Byung-Chan
Agents
  • VINCENT, Lester J.
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) FULLY ENCAPSULATED CONDUCTIVE LINES
(FR) LIGNES CONDUCTRICES COMPLÈTEMENT ENCAPSULÉES
Abstract
(EN) Fully encapsulated conductive lines are generally described. For example, a first dielectric layer is formed on a substrate. Copper wiring is disposed below a top surface of the first dielectric layer. A barrier metal layer is formed over the copper wiring, the barrier metal layer flush with the top surface of the first dielectric layer, and a second dielectric layer is formed on the barrier metal layer and the top surface of the first dielectric layer. Other embodiments are also disclosed and claimed.
(FR) L'invention concerne généralement des lignes conductrices complètement encapsulées. Par exemple, une première couche diélectrique est formée sur un substrat. Un circuit de cuivre est disposé sous une surface supérieure de la première couche diélectrique. Une couche de métal de barrière est formée sur le circuit de cuivre, la couche de métal de barrière affleurant la surface supérieure de la première couche diélectrique, et une seconde couche diélectrique est formée sur la couche de métal de barrière et la surface supérieure de la première couche diélectrique. L'invention concerne et revendique aussi d'autres modes de réalisation.
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