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1. (WO2013095343) GROUP III-N NANOWIRE TRANSISTORS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2013/095343 International Application No.: PCT/US2011/065919
Publication Date: 27.06.2013 International Filing Date: 19.12.2011
IPC:
H01L 29/78 (2006.01) ,H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, California 95052, US (AllExceptUS)
THEN, Han Wui [MY/US]; US (UsOnly)
CHAU, Robert [US/US]; US (UsOnly)
CHU-KUNG, Benjamin [US/US]; US (UsOnly)
DEWEY, Gilbert [US/US]; US (UsOnly)
KAVALIEROS, Jack [US/US]; US (UsOnly)
METZ, Matthew V. [US/US]; US (UsOnly)
MUKHERJEE, Niloy [IN/US]; US (UsOnly)
PILLARISETTY, Ravi [US/US]; US (UsOnly)
RADOSAVLJEVIC, Marko [US/US]; US (UsOnly)
Inventors:
THEN, Han Wui; US
CHAU, Robert; US
CHU-KUNG, Benjamin; US
DEWEY, Gilbert; US
KAVALIEROS, Jack; US
METZ, Matthew V.; US
MUKHERJEE, Niloy; US
PILLARISETTY, Ravi; US
RADOSAVLJEVIC, Marko; US
Agent:
VINCENT, Lester J.; Blakely, Sokoloff, Taylor & Zafman LLP 1279 Oakmead Parkway Sunnyvale, California 94086, US
Priority Data:
Title (EN) GROUP III-N NANOWIRE TRANSISTORS
(FR) TRANSISTORS À NANOFILS DU GROUPE III-N
Abstract:
(EN) A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a source region electrically coupled with a first end of the channel region, and a drain region electrically coupled with a second end of the channel region. A second group III-N material on the first group III-N material serves as a charge inducing layer, and/or barrier layer on surfaces of nanowire. A gate insulator and/or gate conductor coaxially wraps completely around the nanowire within the channel region. Drain and source contacts may similarly coaxially wrap completely around the drain and source regions.
(FR) La présente invention concerne un nanofil du groupe III-N disposé sur un substrat. Une longueur longitudinale du nanofil est définie dans une région de canal d'une première matière du groupe III-N, une région de source couplée électriquement à une première extrémité de la région de canal et une région de drain couplée électriquement à une seconde extrémité de la région de canal. Une seconde matière du groupe III-N située sur la première matière du groupe III-N sert de couche d'induction de charge et/ou de couche de barrière sur les surfaces de nanofil. Un diélectrique de grille et/ou un conducteur de grille enveloppent coaxialement la totalité du nanofil à l'intérieur de la région de canal. Les contacts de drain et de source peuvent, de façon similaire, envelopper coaxialement la totalité des régions de drain et de source.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20130279145CN104011868DE112011105945