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1. WO2013063070 - USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL

Publication Number WO/2013/063070
Publication Date 02.05.2013
International Application No. PCT/US2012/061628
International Filing Date 24.10.2012
IPC
C01B 21/06 2006.1
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
21Nitrogen; Compounds thereof
06Binary compounds of nitrogen with metals, with silicon, or with boron
C30B 7/00 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
B01D 9/00 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
9Crystallisation
CPC
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
C30B 7/105
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10by application of pressure, e.g. hydrothermal processes
105using ammonia as solvent, i.e. ammonothermal processes
Y10T 117/1096
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
10Apparatus
1024for crystallization from liquid or supercritical state
1096including pressurized crystallization means [e.g., hydrothermal]
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US]
  • PIMPUTKAR, Siddha [US]/[US]
  • VON DOLLEN, Paul M. [US]/[US]
  • SPECK, James S. [US]/[US]
  • NAKAMURA, Shuji [US]/[US]
Inventors
  • PIMPUTKAR, Siddha
  • VON DOLLEN, Paul M.
  • SPECK, James S.
  • NAKAMURA, Shuji
Agents
  • GATES, George H.
Priority Data
61/550,74224.10.2011US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL
(FR) UTILISATION DE MÉTAUX ALCALINO-TERREUX POUR RÉDUIRE L'INCORPORATION D'IMPURETÉS DANS UN CRISTAL DE NITRURE DE GROUPE III
Abstract
(EN) Alkaline-earth metals are used to reduce impurity incorporation into a III nitride crystal grown using the ammonothermal method.
(FR) La présente invention concerne l'utilisation de métaux alcalino-terreux pour réduire l'incorporation d'impuretés dans un cristal de nitrure de groupe III dont la croissance est réalisée au moyen d'un procédé ammonothermique.
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