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Machine translation
1. (WO2013059010) REPLACEMENT GATE MULTIGATE TRANSISTOR FOR EMBEDDED DRAM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/059010    International Application No.:    PCT/US2012/059154
Publication Date: 25.04.2013 International Filing Date: 06.10.2012
IPC:
H01L 21/82 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; 1 New Orchard Road Armonk, NY 10504 (US) (For All Designated States Except US).
CHANG, Josephine, B [US/US]; (US) (US only).
CHANG, Leland [US/US]; (US) (US only).
GUILLORN, Michael, A. [US/US]; (US) (US only).
HAENSCH, Wilfried, E. [DE/US]; (US) (US only)
Inventors: CHANG, Josephine, B; (US).
CHANG, Leland; (US).
GUILLORN, Michael, A.; (US).
HAENSCH, Wilfried, E.; (US)
Agent: TUCHMAN, Ido; Law Office of Ido Tuchman 82-70 Beverly Road Kew Gardens, NY 11415 (US)
Priority Data:
13/274,758 17.10.2011 US
Title (EN) REPLACEMENT GATE MULTIGATE TRANSISTOR FOR EMBEDDED DRAM
(FR) TRANSISTOR À GRILLES MULTIPLES À GRILLE DE REMPLACEMENT POUR UNE DRAM INTÉGRÉE
Abstract: front page image
(EN)A memory cell, an array of memory cells, and a method for fabricating a memory cell with multigate transistors such as fully depleted finFET or nano-wire transistors in embedded DRAM. The memory cell includes a trench capacitor, a non-planar transistor, and a self-aligned silicide interconnect electrically coupling the trench capacitor to the non-planar transistor.
(FR)L'invention concerne une cellule de mémoire, un réseau de cellules de mémoire et un procédé de fabrication d'une cellule de mémoire muni des transistors à grilles multiples, tels que des transistors FinFET entièrement appauvris ou des transistors à nanofils, dans une DRAM intégrée. La cellule de mémoire comprend un condensateur en tranchée, un transistor non planaire et une interconnexion de siliciure auto-alignée qui connecte électriquement le condensateur en tranchée au transistor non planaire.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)