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1. (WO2013058900) HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/058900    International Application No.:    PCT/US2012/055008
Publication Date: 25.04.2013 International Filing Date: 13.09.2012
IPC:
C09K 11/02 (2006.01), C09K 11/70 (2006.01), C09K 11/88 (2006.01)
Applicants: EASTMAN KODAK COMPANY [US/US]; 343 State Street Rochester, NY 14650-2201 (US) (For All Designated States Except US).
KAHEN, Keith Brian [US/US]; (US) (For US Only).
HOLLAND, Matthew [US/US]; (US) (For US Only).
PALLIKKARA KUTTIATOOR, Sudeep [IN/US]; (US) (For US Only)
Inventors: KAHEN, Keith Brian; (US).
HOLLAND, Matthew; (US).
PALLIKKARA KUTTIATOOR, Sudeep; (US)
Common
Representative:
EASTMAN KODAK COMPANY; 343 State Street Rochester, NY 14650-2201 (US)
Priority Data:
13/275,424 18.10.2011 US
13/275,595 18.10.2011 US
Title (EN) HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS
(FR) NANOCRISTAUX SEMI-CONDUCTEURS HAUTEMENT CONFINÉS
Abstract: front page image
(EN)A high confinement semiconductor nanocrystal and method for making such nanocrystal are described. The nanocrystal includes a compact homogenous semiconductor region having a first composition in the center area of the nanocrystal, with its diameter being less than 2.0 nm; and a gradient alloy region comprised of a second varying alloy composition which extends from the surface of the compact homogenous semiconductor region to the surface of the nanocrystal.
(FR)La présente invention porte sur un nanocristal semi-conducteur à confinement élevé et un procédé de réalisation d'un tel nanocristal. Le nanocristal comprend une région de semi-conducteur homogène compact ayant une première composition dans la zone centrale du nanocristal, avec son diamètre qui est inférieur à 2,0 nm; et une région d'alliage à gradient comprenant une seconde composition d'alliage variable qui s'étend de la surface de la région de semi-conducteur homogène compact à la surface du nanocristal.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)