WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2013058724) BYPASS DIODE FOR A SOLAR CELL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/058724    International Application No.:    PCT/US2011/054607
Publication Date: 25.04.2013 International Filing Date: 03.10.2011
IPC:
H01L 31/042 (2006.01), H01L 31/06 (2012.01), H01L 31/18 (2006.01)
Applicants: SUNPOWER CORPORATION [US/US]; 3939 North First Street San Jose, CA 95134 (US) (For All Designated States Except US).
RIM, Seung Bum [KR/US]; (US) (For US Only).
KIM, Taeseok [KR/US]; (US) (For US Only).
SMITH, David D. [US/US]; (US) (For US Only).
COUSINS, Peter J. [AU/US]; (US) (For US Only)
Inventors: RIM, Seung Bum; (US).
KIM, Taeseok; (US).
SMITH, David D.; (US).
COUSINS, Peter J.; (US)
Agent: VINCENT, Lester J.; Blakely, Sokoloff, Taylor & Zafman LLP 1279 Oakmead Parkway Sunnyvale, CA 94085-4040 (US)
Priority Data:
12/967,976 14.12.2010 US
Title (EN) BYPASS DIODE FOR A SOLAR CELL
(FR) DIODE DE DÉRIVATION POUR CELLULE SOLAIRE
Abstract: front page image
(EN)Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.
(FR)La présente invention porte sur des diodes de dérivation pour cellules solaires. Selon un mode de réalisation, une diode de dérivation pour cellule solaire comprend un substrat de la cellule solaire. Une première région conductrice est disposée au-dessus du substrat, la première région conductrice étant d'un premier type de conductivité. Une seconde région conductrice est disposée sur la première région conductrice, la seconde région conductrice étant d'un second type de conductivité opposé au premier type de conductivité.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)