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1. WO2013058290 - ADHESIVE TAPE FOR SEMICONDUCTOR DEVICE DICING

Publication Number WO/2013/058290
Publication Date 25.04.2013
International Application No. PCT/JP2012/076865
International Filing Date 17.10.2012
IPC
H01L 21/301 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
C09J 7/02 2006.1
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
7Adhesives in the form of films or foils
02on carriers
C09J 201/00 2006.1
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
201Adhesives based on unspecified macromolecular compounds
CPC
C09J 2203/326
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2203Applications of adhesives in processes or use of adhesives in the form of films or foils
326for bonding electronic components such as wafers, chips or semiconductors
C09J 2301/162
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2301Additional features of adhesives in the form of films or foils
10characterized by the structural features of the adhesive tape or sheet
16by the structure of the carrier layer
162the carrier being a laminate constituted by plastic layers only
C09J 2423/046
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2423Presence of polyolefin
04Presence of homo or copolymers of ethene
046in the substrate
C09J 2423/106
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2423Presence of polyolefin
10Presence of homo or copolymers of propene
106in the substrate
C09J 7/29
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
7Adhesives in the form of films or foils
20characterised by their carriers
29Laminated material
H01L 21/6836
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
6836Wafer tapes, e.g. grinding or dicing support tapes
Applicants
  • 古河電気工業株式会社 FURUKAWA ELECTRIC CO., LTD. [JP]/[JP]
Inventors
  • 大田 郷史 OTA, Satoshi
  • 岡本 和幸 OKAMOTO, Kazuyuki
Agents
  • 飯田 敏三 IIDA, Toshizo
Priority Data
2011-23227821.10.2011JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) ADHESIVE TAPE FOR SEMICONDUCTOR DEVICE DICING
(FR) BANDE ADHÉSIVE POUR DÉCOUPAGE EN DÉS DE DISPOSITIF SEMI-CONDUCTEUR
(JA) 半導体デバイス用ダイシング加工用粘着テープ
Abstract
(EN) An adhesive tape (100) for semiconductor device dicing, which is obtained by forming a radiation-curable adhesive layer (20) on a base film (10). The base film (10) is formed of two or more base resin film layers. A base resin film layer (2) that is adjacent to the adhesive layer has a melting point of 100-120°C, while a base resin film layer (1) that is adjacent to the adhesive layer-side base resin film layer on the reverse side of the adhesive layer side has a melting point of 140-150°C.
(FR) La présente invention porte sur une bande adhésive (100) pour découpage en dés de dispositif semi-conducteur, qui est obtenue par réalisation d'une couche adhésive durcissable sous l'effet d'un rayonnement (20) sur un film de base (10). Le film de base (10) est formé d'au moins deux couches de film de résine de base. Une couche de résine de film de base (2) qui est adjacente à la couche adhésive a un point de fusion de 100-120°C, alors qu'une couche de film de résine de base (1) qui est adjacente à la couche de film de résine de base côté couche adhésive sur le côté inverse du côté couche adhésive a un point de fusion de 140-150°C.
(JA) 基材フィルム10上に放射線硬化型粘着剤層20を形成してなる半導体デバイスダイシング用粘着テープ100であって、前記基材フィルム10が2層以上の基材樹脂フィルム層からなり、前記粘着剤層側に隣接する基材樹脂フィルム層2の融点が100~120℃であり、該粘着剤層側の基材樹脂フィルム層と前記粘着剤層と逆側で隣接する基材樹脂フィルム層1の融点が140~150℃である。
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