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1. WO2013056582 - INFRARED DETECTOR AND PREPARATION METHOD THEREOF

Publication Number WO/2013/056582
Publication Date 25.04.2013
International Application No. PCT/CN2012/079126
International Filing Date 25.07.2012
IPC
G01J 5/20 2006.1
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
H01L 27/144 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
G01J 5/00
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
G01J 5/02
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
02Details
G01J 5/10
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
G01J 5/20
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
G01J 5/24
GPHYSICS
01MEASURING; TESTING
JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
5Radiation pyrometry
10using electric radiation detectors
20using resistors, thermistors or semiconductors sensitive to radiation
22Electrical features
24Use of a specially-adapted circuit, e.g. bridge circuit
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
Applicants
  • 清华大学 TSINGHUA UNIVERSITY [CN]/[CN] (AllExceptUS)
  • 蔡坚 CAI, Jian [CN]/[CN] (UsOnly)
  • 王谦 WANG, Qian [CN]/[CN] (UsOnly)
  • 刘子玉 LIU, Ziyu [CN]/[CN] (UsOnly)
  • 胡杨 HU, Yang [CN]/[CN] (UsOnly)
Inventors
  • 蔡坚 CAI, Jian
  • 王谦 WANG, Qian
  • 刘子玉 LIU, Ziyu
  • 胡杨 HU, Yang
Agents
  • 北京润平知识产权代理有限公司 RUNPING & PARTNERS
Priority Data
201110319208.619.10.2011CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) INFRARED DETECTOR AND PREPARATION METHOD THEREOF
(FR) DÉTECTEUR INFRAROUGE ET SON PROCÉDÉ DE PRODUCTION
(ZH) 一种红外探测器及其制备方法
Abstract
(EN) An infrared detector and a preparation method thereof. The infrared detector includes: an infrared detection element (1) and a readout circuit (2), wherein the infrared detection element (1) is formed on one side of a first substrate (100), and an edge of the infrared detection element (1) is provided with an electrode hole (9), and the readout circuit (2) is formed on one side of a second substrate (200) and the readout circuit (2) has an electrode, the first substrate (100) is formed thereon with a silicon via (8) passing through the first substrate (100) and filled with a conductive material, the electrode hole (9) of the infrared detection element (1) is electrically connected to the electrode of the readout circuit (2) via the conductive material filled in the silicon via (8). The following defects are overcome: infrared detectors in the prior art need to flatten the silicon wafer surface with a suitable chemical-mechanical polishing process after a readout circuit thereof has been manufactured, the circuit is large in area, and the requirements of the system integration process are high.
(FR) L'invention concerne un détecteur infrarouge et son procédé de production. Le détecteur infrarouge comprend : un élément de détection infrarouge (1) et un circuit de lecture (2). L'élément de détection infrarouge (1) est monté sur un côté d'un premier substrat (100) et un bord de l'élément de détection infrarouge (1) est doté d'un trou d'électrode (9), et le circuit de lecture (2) est monté sur un côté d'un second substrat (200) et comprend une électrode. Le premier substrat (100) est monté sur l'électrode avec un trou d'interconnexion à travers le silicium (8) traversant ledit premier substrat (100) et est rempli d'un matériau conducteur, le trou d'électrode (9) de l'élément de détection infrarouge (1) est connecté électriquement à l'électrode du circuit de lecture (2) via le matériau conducteur remplissant le trou d'interconnexion à travers le silicium (8). Les défauts suivants sont surmontés: les détecteurs infrarouges de l'état de la technique doivent aplatir la surface de la tranche de silicium au moyen d'un processus de polissage chimico-mécanique approprié une fois que leur circuit de lecture a été fabriqué, le circuit étant large dans une zone, et les besoins du processus d'intégration système étant élevés.
(ZH) 一种红外探测器及其制备方法,红外探测器包括红外探测元件(1)和读出电路(2),红外探测元件(1)形成在第一衬底(100)的一侧,红外探测元件(1)的边缘具有电极孔(9),其中,读出电路(2)形成在第二衬底(200)的一侧,并且读出电路(2)具有电极,第一衬底(100)上形成有贯穿第一衬底(100)的并且填充有导电材料的硅通孔(8),所述红外探测元件(1)的电极孔(9)与所述读出电路(2)的电极通过硅通孔(8)中填充的导电材料彼此电连接。克服了现有技术中的红外探测器在其读出电路制作完成后需要合适的化学机械抛光工艺来实现硅片表面的平坦化,电路面积大,以及系统集成工艺要求高的缺陷。
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