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1. WO2013056186 - SEMICONDUCTOR PROCESSING BY MAGNETIC FIELD GUIDED ETCHING

Publication Number WO/2013/056186
Publication Date 18.04.2013
International Application No. PCT/US2012/060143
International Filing Date 12.10.2012
IPC
H01L 21/3065 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 27/115 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 21/8247 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8246Read-only memory structures (ROM)
8247electrically-programmable (EPROM)
CPC
A61M 2037/0046
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY
37Other apparatus for introducing media into the body
0015by using microneedles
0046Solid microneedles
A61M 2037/0053
AHUMAN NECESSITIES
61MEDICAL OR VETERINARY SCIENCE; HYGIENE
MDEVICES FOR INTRODUCING MEDIA INTO, OR ONTO, THE BODY
37Other apparatus for introducing media into the body
0015by using microneedles
0053Methods for producing microneedles
B28D 5/00
BPERFORMING OPERATIONS; TRANSPORTING
28WORKING CEMENT, CLAY, OR STONE
DWORKING STONE OR STONE-LIKE MATERIALS
5Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
B81B 2201/055
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
05Microfluidics
055Microneedles
B81C 1/00111
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00023without movable or flexible elements
00111Tips, pillars, i.e. raised structures
B81C 1/00515
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
005Bulk micromachining
00515Bulk micromachining techniques not provided for in B81C1/00507
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US]
  • JIN, Sungho [US]/[US]
  • OH, Young [KR]/[US]
  • CHOI, Chulmin [US]/[US]
  • HONG, Dae-Hoon [US]/[US]
  • KIM, Tae, Kyoung [US]/[US]
Inventors
  • JIN, Sungho
  • OH, Young
  • CHOI, Chulmin
  • HONG, Dae-Hoon
  • KIM, Tae, Kyoung
Agents
  • AL, Bing
Priority Data
61/546,54212.10.2011US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR PROCESSING BY MAGNETIC FIELD GUIDED ETCHING
(FR) TRAITEMENT DE SEMI-CONDUCTEURS PAR GRAVURE GUIDÉE PAR CHAMP MAGNÉTIQUE
Abstract
(EN) Methods, systems, and devices are described for slicing and shaping materials using magnetically guided chemical etching. In one aspect, a method includes forming a pattern on a substrate by a mask, depositing a catalytic etcher layer on the patterned substrate, a magnetic guide layer on the etcher layer, and a protection layer on the guide layer, etching the substrate by applying an etching solution to the substrate that chemically reacts with the etcher layer and etches material from the substrate at exposed regions not covered by the mask, steering the composite etching structure into the substrate during the etching by an applied magnetic field that creates a force on the guide layer to direct the etching, in which the steering defines the shape of the sliced regions of the etched substrate, and removing the etched material, the mask, and the composite etching structure to produce a sliced material structure.
(FR) La présente invention concerne des procédés, des systèmes et des dispositifs pour découper et donner une forme à des matériaux à l'aide de la gravure chimique à guidage magnétique. Selon un aspect, un procédé consiste à former un motif sur un substrat à l'aide d'un masque, à déposer une couche de gravure catalytique sur le substrat portant le motif, une couche de guidage magnétique sur la couche de gravure et une couche de protection sur la couche de guidage, à graver le substrat par application d'une solution de gravure qui réagit chimiquement avec la couche de gravure et entame le matériau du substrat dans les régions à nu non couvertes par le masque, à diriger la structure de gravure composite dans le substrat pendant la gravure par application d'un champ magnétique qui crée une force sur la couche de guidage pour diriger la gravure, le guidage définissant alors la forme des régions découpées du substrat gravé, et à éliminer le matériau détaché, le masque et la structure de gravure composite pour produire une structure de matériau découpé.
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