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1. (WO2013055410) N-DOPING OF ORGANIC SEMICONDUCTORS BY BIS-METALLOSANDWICH COMPOUNDS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/055410    International Application No.:    PCT/US2012/042287
Publication Date: 18.04.2013 International Filing Date: 13.06.2012
IPC:
H01L 51/00 (2006.01)
Applicants: GEORGIA TECH RESEARCH CORPORATION [US/US]; 505 Tenth Street Atlanta, GA 30332-0415 (US) (For All Designated States Except US).
THE TRUSTEES OF PRINCETON UNIVERSITY [US/US]; One Nassau Hall Princeton, NJ 08544 (US) (For All Designated States Except US).
BARLOW, Stephen [GB/US]; (US) (For US Only).
QI, Yabing [CN/US]; (US) (For US Only).
KAHN, Antoine [FR/US]; (US) (For US Only).
MARDER, Seth [US/US]; (US) (For US Only).
KIM, Sang Bok [KR/US]; (US) (For US Only).
MOHAPATRA, Swagat K. [IN/US]; (US) (For US Only).
GUO, Song [CN/US]; (US) (For US Only)
Inventors: BARLOW, Stephen; (US).
QI, Yabing; (US).
KAHN, Antoine; (US).
MARDER, Seth; (US).
KIM, Sang Bok; (US).
MOHAPATRA, Swagat K.; (US).
GUO, Song; (US)
Agent: RUTT, J. Steven; Foley & Lardner LLP 3000 K Street NW Suite 600 Washington, DC 20007 (US)
Priority Data:
61/496,667 14.06.2011 US
Title (EN) N-DOPING OF ORGANIC SEMICONDUCTORS BY BIS-METALLOSANDWICH COMPOUNDS
(FR) DOPAGE N DE SEMI-CONDUCTEURS ORGANIQUES AU MOYEN DE COMPOSÉS À DOUBLE SANDWICH MÉTALLIQUE
Abstract: front page image
(EN)The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
(FR)Les différentes inventions contenues, décrites et/ou revendiquées dans le présent document concernent des procédés permettant le dopage n de semi-conducteurs organiques au moyen de composés à double sandwich métallique, les compositions dopées ainsi obtenues et les utilisations de ces compositions dopées dans des dispositifs électroniques organiques. Les métaux utilisés peuvent être le manganèse, le rhénium, le fer, le ruthénium, l'osmium, le rhodium ou l'iridium. Il est ainsi possible d'obtenir un dopage stable et efficace.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)