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Machine translation
1. (WO2013055332) SELECT DEVICE FOR CROSS POINT MEMORY STRUCTURES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/055332    International Application No.:    PCT/US2011/056006
Publication Date: 18.04.2013 International Filing Date: 12.10.2011
IPC:
G11C 13/00 (2006.01), G11C 7/00 (2006.01), G11C 5/02 (2006.01)
Applicants: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070 (US) (For All Designated States Except US).
RIBEIRO, Gilberto M. [BR/US]; (US) (For US Only).
NICKEL, Janice H. [US/US]; (US) (For US Only)
Inventors: RIBEIRO, Gilberto M.; (US).
NICKEL, Janice H.; (US)
Agent: CHANG, Yeh K.; Hewlett-Packard Company Intellectual Property Administration 3404 E. Harmony Road Mail Stop 35 Fort Collins, Colorado 80528 (US)
Priority Data:
Title (EN) SELECT DEVICE FOR CROSS POINT MEMORY STRUCTURES
(FR) DISPOSITIF DE SÉLECTION POUR DES STRUCTURES DE MÉMOIRE À POINTS DE CROISEMENT
Abstract: front page image
(EN)The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first conductor and the second conductor configured to activate the resistive memory element. The memory cell also includes a backward diode disposed in series with the memory element between the memory element and either the first conductor or the second conductor.
(FR)La présente invention concerne une cellule de mémoire, qui comprend un élément de mémoire résistif disposé entre un premier et un second conducteur, le premier conducteur et le second conducteur étant configurés pour activer l'élément de mémoire résistif. La cellule de mémoire comprend également une diode arrière disposée en série avec l'élément de mémoire entre l'élément de mémoire et soit le premier conducteur soit le second conducteur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)