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1. WO2013054838 - LIQUID PROCESSING APPARATUS AND LIQUID PROCESSING METHOD

Publication Number WO/2013/054838
Publication Date 18.04.2013
International Application No. PCT/JP2012/076302
International Filing Date 11.10.2012
IPC
H01L 21/304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
G03F 7/42 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
H01L 21/027 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/306 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
H01L 21/02076
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02041Cleaning
02076Cleaning after the substrates have been singulated
H01L 21/30604
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
30604Chemical etching
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
H01L 21/67075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67075for wet etching
H01L 21/6708
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67075for wet etching
6708using mainly spraying means, e.g. nozzles
H01L 21/6719
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
6719characterized by the construction of the processing chambers, e.g. modular processing chambers
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 相浦 一博 AIURA Kazuhiro
  • 伊藤 規宏 ITOH Norihiro
Agents
  • 勝沼 宏仁 KATSUNUMA Hirohito
Priority Data
2011-22597413.10.2011JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) LIQUID PROCESSING APPARATUS AND LIQUID PROCESSING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE TRAITEMENT LIQUIDE
(JA) 液処理装置および液処理方法
Abstract
(EN) A liquid processing apparatus (10) of the present invention comprises a substrate holding portion (21) which holds a substrate horizontally, and a rotatable top plate (32) which covers the substrate held by the substrate holding portion (21) from above to form a processing space (30). In the processing space (30), a liquid medicine is supplied by a chemical solution nozzle (82a) to the substrate, and an atmosphere substituent gas is supplied by a substitution nozzle (82c) into the processing space (30). The substitution nozzle (82c) is supported by a substitution nozzle supporting arm (82) which moves horizontally between an advanced position in the processing space (30) and a retracted position out of the processing space (30), and discharges the atmosphere substituent gas upwards from an upper portion of the substrate.
(FR) Le dispositif de traitement liquide (10) de l'invention est équipé : d'une partie maintien de substrat (21) maintenant horizontalement un substrat; d'une plaque supérieure (32) capable d'une rotation qui recouvre par le haut le substrat maintenu par la partie maintien de substrat (21), et qui forme un espace de traitement (30). À l'intérieur de l'espace de traitement (30), un liquide chimique est acheminé vers le substrat par une buse de liquide chimique (82a), et un gaz de remplacement d'atmosphère est acheminé à l'intérieur de l'espace de traitement (30) par une buse de remplacement (82c). En outre, la buse de remplacement (82c) est configurée de sorte qu'elle est supportée par un bras de support de buse de remplacement (82) se déplaçant dans une direction horizontale entre une position pénétration pénétrant à l'intérieur de l'espace de traitement (30), et une position retrait se retirant hors de l'espace de traitement (30), et que le gaz de remplacement d'atmosphère est déchargé vers le haut au-dessus du substrat.
(JA)  本発明による液処理装置(10)は、基板を水平に保持する基板保持部(21)と、基板保持部(21)に保持された基板を上方から覆い、処理空間(30)を形成する回転可能な天板(32)と、を備えている。処理空間(30)内においては、薬液ノズル(82a)により基板に対して薬液が供給され、置換ノズル(82c)により雰囲気置換ガスが処理空間(30)内に供給されるようになっている。また、置換ノズル(82c)は、処理空間(30)内に進出した進出位置と処理空間(30)から外方に退避した退避位置との間で水平方向に移動する置換ノズル支持アーム(82)によって支持されると共に、基板の上方において雰囲気置換ガスを上方に向けて吐出するように構成されている。
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