WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2013054633) PHOTOELECTRIC CONVERSION DEVICE AND PRODUCTION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/054633    International Application No.:    PCT/JP2012/073449
Publication Date: 18.04.2013 International Filing Date: 13.09.2012
IPC:
H01L 31/04 (2006.01)
Applicants: SHARP KABUSHIKI KAISHA [JP/JP]; 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522 (JP) (For All Designated States Except US).
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921 (JP) (For All Designated States Except US).
SUGITA, Yoshitaka; (For US Only).
KONDO, Michio [JP/JP]; (JP) (For US Only).
MATSUI, Takuya [JP/JP]; (JP) (For US Only)
Inventors: SUGITA, Yoshitaka; .
KONDO, Michio; (JP).
MATSUI, Takuya; (JP)
Agent: Fukami Patent Office, p.c.; Nakanoshima Central Tower, 2-7, Nakanoshima 2-chome, Kita-ku, Osaka-shi, Osaka 5300005 (JP)
Priority Data:
2011-225914 13.10.2011 JP
Title (EN) PHOTOELECTRIC CONVERSION DEVICE AND PRODUCTION METHOD THEREFOR
(FR) DISPOSITIF DE CONVERSION PHOTOÉLECTRIQUE ET PROCÉDÉ DE PRODUCTION POUR CELUI-CI
(JA) 光電変換装置およびその製造方法
Abstract: front page image
(EN)A photoelectric conversion device comprising: a p-type semiconductor layer (120); an n-type semiconductor layer (140); and an i-type semiconductor layer (130) which is obtained by adding nitrogen to microcrystalline silicon-germanium, is positioned between the p-type semiconductor layer (120) and the n-type semiconductor layer (140), and constitutes a pin junction or a nip junction.
(FR)La présente invention porte sur un dispositif de conversion photoélectrique comprenant : une couche de semi-conducteur de type p (120) ; une couche de semi-conducteur de type n (140) ; et une couche de semi-conducteur de type i (130) positionnée entre la couche de semi-conducteur de type p (120) et la couche de semi-conducteur de type n (140), réalisant une jonction p-i-n ou une jonction n-i-p et ayant de l'azote ajouté à du silicium-germanium microcristallisé.
(JA) p型半導体層(120)と、n型半導体層(140)と、p型半導体層(120)とn型半導体層(140)との間に位置してpin接合またはnip接合を構成する、微結晶シリコンゲルマニウムに窒素が添加されたi型半導体層(130)とを備える。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)