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Machine translation
1. (WO2013054212) VERTICAL TRANSISTOR HAVING AN ASYMMETRIC GATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/054212    International Application No.:    PCT/IB2012/053824
Publication Date: 18.04.2013 International Filing Date: 26.07.2012
IPC:
H01L 21/336 (2006.01), H01L 29/78 (2006.01)
Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504 (US) (For All Designated States Except US).
IBM UNITED KINGDOM LIMITED [GB/GB]; PO Box 41, North Harbour Portsmouth Hampshire PO6 3AU (GB) (MG only).
IBM JAPAN LIMITED [JP/JP]; 19-21 Nihonbashi Hakozaki-cho, Chuo-ku Tokyo 103-8510 (JP) (MG only).
GUO, Dechao [CN/US]; (US) (For US Only).
YUAN, Jun [CN/US]; (US) (For US Only).
WONG, Keith, Kwong Hon [US/US]; (US) (For US Only).
HAN, Shu-Jen [--/US]; (US) (For US Only)
Inventors: GUO, Dechao; (US).
YUAN, Jun; (US).
WONG, Keith, Kwong Hon; (US).
HAN, Shu-Jen; (US)
Agent: WILLIAMS, Julian; IBM United Kingdom Limited Intellectual Property Law Hursley Park Winchester Hampshire SO21 2JN (GB)
Priority Data:
13/271,812 12.10.2011 US
Title (EN) VERTICAL TRANSISTOR HAVING AN ASYMMETRIC GATE
(FR) TRANSISTOR VERTICAL À GRILLE ASYMÉTRIQUE
Abstract: front page image
(EN)A transistor structure is formed to include a substrate and, overlying the substrate, a source; a drain; and a channel disposed vertically between the source and the drain. The channel is coupled to a gate conductor that surrounds the channel via a layer of gate dielectric material that surrounds the channel. The gate conductor is composed of a first electrically conductive material having a first work function that surrounds a first portion of a length of the channel and a second electrically conductive material having a second work function that surrounds a second portion of the length of the channel. A method to fabricate the transistor structure is also disclosed. The transistor structure can be characterized as being a vertical field effect transistor having an asymmetric gate.
(FR)La présente invention concerne une structure de transistor réalisée de façon à comporter un substrat, et superposés au-dessus du substrat, une source, un drain, et un canal disposé verticalement entre la source et le drain. Le canal est couplé à un conducteur de grille qui entoure le canal par l'intermédiaire d'une couche de matière diélectrique de grille entourant le canal. Le conducteur de grille se compose, d'une part d'une première matière électroconductrice, qui est dotée d'une première fonction de travail, et qui entoure une première partie de la longueur du canal, et d'autre part d'une seconde matière électroconductrice, qui est dotée d'une seconde fonction de travail, et qui entoure une seconde partie de la longueur du canal. L'invention concerne également un procédé de fabrication de cette structure de transistor. Cette structure de transistor peut se caractériser en ce qu'elle constitue un transistor à effet de champ vertical pourvu d'une grille asymétrique.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)