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1. WO2013052833 - HIGH POWER SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY

Publication Number WO/2013/052833
Publication Date 11.04.2013
International Application No. PCT/US2012/059007
International Filing Date 05.10.2012
IPC
H01L 21/8238 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8238Complementary field-effect transistors, e.g. CMOS
CPC
H01L 21/8236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8236Combination of enhancement and depletion transistors
H01L 25/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
H01L 27/0288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0248for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
0251for MOS devices
0288using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
H01L 27/0629
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
0617comprising components of the field-effect type
0629in combination with diodes, or resistors, or capacitors
H01L 28/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
20Resistors
H01L 29/2003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
20including, apart from doping materials or other impurities, only AIIIBV compounds
2003Nitride compounds
Applicants
  • TRANSPHORM INC. [US]/[US]
Inventors
  • LAL, Rakesh K.
  • COFFIE, Robert
  • WU, Yifeng
  • PARIKH, Primit
  • DORA, Yuvaraj
  • MISHRA, Umesh
  • CHOWDHURY, Srabanti
  • FICHTENBAUM, Nicholas
Agents
  • BROWNING, Matthew E.
Priority Data
13/269,36707.10.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH POWER SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY
(FR) COMPOSANTS ÉLECTRONIQUES À SEMICONDUCTEURS POUR HAUTE PUISSANCE À FIABILITÉ ACCRUE
Abstract
(EN)
An electronic component includes a depletion-mode transistor, an enhancement-mode transistor, and a resistor. The depletion-mode transistor has a higher breakdown voltage than the enhancement-mode transistor. A first terminal of the resistor is electrically connected to a source of the enhancement-mode transistor, and a second terminal of the resistor and a source of the depletion-mode transistor are each electrically connected to a drain of the enhancement-mode transistor. A gate of the depletion-mode transistor can be electrically connected to a source of the enhancement-mode transistor.
(FR)
L'invention concerne un composant électronique qui comprend un transistor à mode de déplétion, un transistor à mode d'enrichissement et une résistance. Le transistor à mode de déplétion offre une tension de claquage supérieure à celle du transistor à mode d'enrichissement. Une première borne de la résistance est connectée électriquement à une source du transistor à mode d'enrichissement et une seconde borne de la résistance et une source du transistor à mode de déplétion sont connectées électriquement chacune à un drain du transistor à mode d'enrichissement. Une grille du transistor à mode de déplétion peut être connectée électriquement à une source du transistor à mode d'enrichissement.
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