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1. WO2013052054 - SYSTEM AND METHOD FOR PROVIDING BI-DIRECTIONAL POWER FLOW AND POWER CONDITIONING

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Publication Number WO/2013/052054
Publication Date 11.04.2013
International Application No. PCT/US2011/055088
International Filing Date 06.10.2011
IPC
H03K 17/687 2006.1
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
51characterised by the use of specified components
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
H02H 9/02 2006.1
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
9Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
02responsive to excess current
CPC
H03K 17/567
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
H03K 17/6874
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
6871the output circuit comprising more than one controlled field-effect transistor
6874in a symmetrical configuration
H03K 2017/6875
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
6875using self-conductive, depletion FETs
Applicants
  • NORTHROP GRUMMAN SYSTEMS CORPORATION [US]/[US] (AllExceptUS)
  • VELIADIS, John, Victor [US]/[US] (UsOnly)
Inventors
  • VELIADIS, John, Victor
Agents
  • HARRIS, Christopher, P.
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEM AND METHOD FOR PROVIDING BI-DIRECTIONAL POWER FLOW AND POWER CONDITIONING
(FR) SYSTÈME ET PROCÉDÉ POUR ASSURER UN FLUX D'ÉNERGIE BIDIRECTIONNEL ET UN CONDITIONNEMENT DE PUISSANCE
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Abstract
(EN) A system and method for providing symmetric, efficient bi-directional power flow and power conditioning for high-voltage applications. Embodiments include a system that comprises a first normally-on junction field-effect transistor (JFET) having a drain that forms a first coupling node and a first normally-off semiconductor transistor having a drain coupled to a source of the first normally-on JFET and a source coupled to a gate of the first normally-on JFET, wherein a high voltage on the first coupling node provides a negative voltage on the gate of the first normally-on JFET resulting in blocking of the high voltage and mitigating power flow through the normally-on JFET and normally-off semiconductor transistor.
(FR) L'invention porte sur un système et un procédé pour assurer un flux d'énergie bidirectionnel efficace symétrique et un conditionnement de puissance pour des applications hautes tensions. Des modes de réalisation portent sur un système qui comprend un premier transistor à effet de champ à jonction (JFET) normalement passant comprenant un drain qui forme un premier nœud de couplage et un premier transistor à semi-conducteur normalement bloqué comprenant un drain couplé à une source du premier JFET normalement passant et une source couplée à une grille du premier JFET normalement passant, une tension élevée sur le premier nœud de couplage procurant une tension négative sur la grille du premier JFET normalement passant entraînant le blocage de la tension élevée et limitant le flux d'énergie à travers le JFET normalement passant et le transistor à semi-conducteur normalement bloqué.
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