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1. WO2013051940 - METHOD FOR PRODUCING SILICON MONO-CRYSTALS AND MULTI-CRYSTALLINE SILICON INGOTS

Publication Number WO/2013/051940
Publication Date 11.04.2013
International Application No. PCT/NO2012/000055
International Filing Date 24.09.2012
IPC
C30B 29/06 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 15/00 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 15/04 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
02adding crystallising materials or reactants forming it in situ to the melt
04adding doping materials, e.g. for n–p-junction
C30B 28/00 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
28Production of homogeneous polycrystalline material with defined structure
CPC
C30B 11/006
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
006Controlling or regulating
C30B 11/007
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
007Mechanisms for moving either the charge or the heater
C30B 11/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
04adding crystallising materials or reactants forming it in situ to the melt
C30B 15/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
02adding crystallising materials or reactants forming it in situ to the melt
04adding doping materials, e.g. for n-p-junction
C30B 15/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
C30B 15/305
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
30Mechanisms for rotating or moving either the melt or the crystal
305Stirring of the melt
Applicants
  • ELKEM SOLAR AS [NO]/[NO] (AllExceptUS)
  • TRONSTAD, Ragnar [NO]/[NO] (US)
  • FRIESTAD, Kenneth [NO]/[NO] (US)
  • SØILAND, Anne, Karin [NO]/[NO] (US)
Inventors
  • TRONSTAD, Ragnar
  • FRIESTAD, Kenneth
  • SØILAND, Anne, Karin
Agents
  • VINDENES, Magne
Priority Data
2011136006.10.2011NO
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR PRODUCING SILICON MONO-CRYSTALS AND MULTI-CRYSTALLINE SILICON INGOTS
(FR) PROCÉDÉ DE FABRICATION DE MONOCRISTAUX DE SILICIUM ET DE LINGOTS DE SILICIUM MULTICRISTALLIN
Abstract
(EN) 1, The present invention relates to a method for increasing the amount of p-type material when pulling silicon mono-crystals and directionally solidifying multi-crystalline silicon ingots from a silicon melt contained in a vessel where the silicon melt initially contains 0.12 ppma and 5 ppma boron and between 0.04 ppma and 10 ppma phosphorous. The pulling of mono-crystals and the directionally solidification of multi-crystalline silicon ingots are carried out at a pressure below 600 mbar and an inert gas is continuously supplied to the surface of the silicon me!t and continuously removed from the surface of the silicon melt whereby phosphorus is continuously removed from the molten silicon during the solidification process resulting in a substantially constant ratio between boron and phosphorus in the silicon melt during the pulling of the silicon mono-crystals and during the directional solidification of the multi- crystalline silicon ingots.
(FR) La présente invention concerne un procédé d'augmentation de la quantité d'une matière de type p lors d'un tirage de monocristaux de silicium et d'une solidification directionnelle de lingots de silicium multicristallin à partir d'une masse fondue de silicium contenue dans un récipient où la masse fondue de silicium contient initialement entre 0,12 ppma et 5 ppma de bore et entre 0,04 ppma et 10 ppma de phosphore. Le tirage de monocristaux et la solidification directionnelle de lingots de silicium multicristallin sont effectués à une pression au-dessous de 600 mbar et un gaz inerte est adressé en continu à la surface de la masse fondue de silicium et retiré en continu à partir de la surface de la masse fondue de silicium, ce par quoi du phosphore est retiré en continu à partir du silicium fondu pendant le procédé de solidification conduisant à un rapport sensiblement constant entre bore et phosphore dans la masse fondue de silicium pendant le tirage des monocristaux de silicium et pendant la solidification directionnelle des lingots de silicium multicristallin.
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