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1. (WO2013051940) METHOD FOR PRODUCING SILICON MONO-CRYSTALS AND MULTI-CRYSTALLINE SILICON INGOTS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/051940    International Application No.:    PCT/NO2012/000055
Publication Date: 11.04.2013 International Filing Date: 24.09.2012
IPC:
C30B 29/06 (2006.01), C30B 15/00 (2006.01), C30B 15/04 (2006.01), C30B 28/00 (2006.01)
Applicants: ELKEM SOLAR AS [NO/NO]; P.O. Box 8040 -Vaagsbygd N-4675 Kristiansand (NO) (For All Designated States Except US).
TRONSTAD, Ragnar [NO/NO]; (NO) (US only).
FRIESTAD, Kenneth [NO/NO]; (NO) (US only).
SØILAND, Anne, Karin [NO/NO]; (NO) (US only)
Inventors: TRONSTAD, Ragnar; (NO).
FRIESTAD, Kenneth; (NO).
SØILAND, Anne, Karin; (NO)
Agent: VINDENES, Magne; Elkem AS,Technology P.O. Box 8040 Vaagsbygd N-4675 Kristiansand S (NO)
Priority Data:
20111360 06.10.2011 NO
Title (EN) METHOD FOR PRODUCING SILICON MONO-CRYSTALS AND MULTI-CRYSTALLINE SILICON INGOTS
(FR) PROCÉDÉ DE FABRICATION DE MONOCRISTAUX DE SILICIUM ET DE LINGOTS DE SILICIUM MULTICRISTALLIN
Abstract: front page image
(EN)1, The present invention relates to a method for increasing the amount of p-type material when pulling silicon mono-crystals and directionally solidifying multi-crystalline silicon ingots from a silicon melt contained in a vessel where the silicon melt initially contains 0.12 ppma and 5 ppma boron and between 0.04 ppma and 10 ppma phosphorous. The pulling of mono-crystals and the directionally solidification of multi-crystalline silicon ingots are carried out at a pressure below 600 mbar and an inert gas is continuously supplied to the surface of the silicon me!t and continuously removed from the surface of the silicon melt whereby phosphorus is continuously removed from the molten silicon during the solidification process resulting in a substantially constant ratio between boron and phosphorus in the silicon melt during the pulling of the silicon mono-crystals and during the directional solidification of the multi- crystalline silicon ingots.
(FR)La présente invention concerne un procédé d'augmentation de la quantité d'une matière de type p lors d'un tirage de monocristaux de silicium et d'une solidification directionnelle de lingots de silicium multicristallin à partir d'une masse fondue de silicium contenue dans un récipient où la masse fondue de silicium contient initialement entre 0,12 ppma et 5 ppma de bore et entre 0,04 ppma et 10 ppma de phosphore. Le tirage de monocristaux et la solidification directionnelle de lingots de silicium multicristallin sont effectués à une pression au-dessous de 600 mbar et un gaz inerte est adressé en continu à la surface de la masse fondue de silicium et retiré en continu à partir de la surface de la masse fondue de silicium, ce par quoi du phosphore est retiré en continu à partir du silicium fondu pendant le procédé de solidification conduisant à un rapport sensiblement constant entre bore et phosphore dans la masse fondue de silicium pendant le tirage des monocristaux de silicium et pendant la solidification directionnelle des lingots de silicium multicristallin.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)