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1. (WO2013051555) SINGLE-CRYSTAL SILICON-CARBIDE SUBSTRATE AND POLISHING SOLUTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/051555    International Application No.:    PCT/JP2012/075504
Publication Date: 11.04.2013 International Filing Date: 02.10.2012
IPC:
C09K 3/14 (2006.01), C30B 29/36 (2006.01), C30B 33/10 (2006.01), H01L 21/205 (2006.01), H01L 21/304 (2006.01)
Applicants: ASAHI GLASS COMPANY, LIMITED [JP/JP]; 5-1, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008405 (JP)
Inventors: YOSHIDA Iori; (JP).
TAKEMIYA Satoshi; (JP).
TOMONAGA Hiroyuki; (JP)
Agent: HAMADA Yuriko; Eikoh Patent Firm, Toranomon East Bldg. 10F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003 (JP)
Priority Data:
2011-222782 07.10.2011 JP
Title (EN) SINGLE-CRYSTAL SILICON-CARBIDE SUBSTRATE AND POLISHING SOLUTION
(FR) SUBSTRAT DE CARBURE DE SILICIUM MONOCRISTALLIN ET SOLUTION DE POLISSAGE
(JA) 炭化ケイ素単結晶基板および研磨液
Abstract: front page image
(EN)The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface that has an atomic step-and-terrace structure comprising atomic steps and terraces derived from the structure of the crystal. In said atomic step-and-terrace structure, the arithmetical mean deviation of profile of the front edge of each atomic step is at most 20% of the height of said atomic step.
(FR)La présente invention concerne un substrat de carbure de silicium monocristallin doté d'une surface principale qui a une structure en gradins et terrasse atomiques comprenant des gradins et terrasses atomiques issus de la structure du cristal. Dans ladite structure en gradins et terrasse atomiques, la déviation moyenne arithmétique de profil de la bordure avant de chaque gradin atomique est d'au plus 20 % de la hauteur dudit gradin atomique.
(JA) 本発明は、結晶構造に由来する原子ステップとテラスとからなる原子ステップ・テラス構造を有する主面を備え、前記原子ステップ・テラス構造において、前記原子ステップのフロント端線部の平均線粗さが、前記原子ステップの高さに対して20%以下の割合である、炭化ケイ素単結晶基板に関する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)