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1. WO2013051163 - GAN FILM MANUFACTURING METHOD AND COMPOSITE SUBSTRATE USED IN SAME

Publication Number WO/2013/051163
Publication Date 11.04.2013
International Application No. PCT/JP2011/079636
International Filing Date 21.12.2011
IPC
C30B 29/38 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C03C 10/0018
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
10Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
0018containing SiO2, Al2O3 and monovalent metal oxide as main constituents
C04B 2235/3225
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
3225Yttrium oxide or oxide-forming salts thereof
C04B 2235/3244
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
3244Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
C04B 2235/3246
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3231Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
3244Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
3246Stabilised zirconias, e.g. YSZ or cerium stabilised zirconia
C04B 2235/3463
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
02Composition of constituents of the starting material or of secondary phases of the final product
30Constituents and secondary phases not being of a fibrous nature
34Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
3427Silicates other than clay, e.g. water glass
3463Alumino-silicates other than clay, e.g. mullite
C04B 2235/9607
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE
2235Aspects relating to ceramic starting mixtures or sintered ceramic products
70Aspects relating to sintered or melt-casted ceramic products
96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
9607Thermal properties, e.g. thermal expansion coefficient
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • 佐藤 一成 SATOH, Issei [JP]/[JP] (UsOnly)
  • 関 裕紀 SEKI, Yuki [JP]/[JP] (UsOnly)
  • 上松 康二 UEMATSU, Koji [JP]/[JP] (UsOnly)
  • 山本 喜之 YAMAMOTO, Yoshiyuki [JP]/[JP] (UsOnly)
  • 松原 秀樹 MATSUBARA, Hideki [JP]/[JP] (UsOnly)
  • 藤原 伸介 FUJIWARA, Shinsuke [JP]/[JP] (UsOnly)
  • 吉村 雅司 YOSHIMURA, Masashi [JP]/[JP] (UsOnly)
Inventors
  • 佐藤 一成 SATOH, Issei
  • 関 裕紀 SEKI, Yuki
  • 上松 康二 UEMATSU, Koji
  • 山本 喜之 YAMAMOTO, Yoshiyuki
  • 松原 秀樹 MATSUBARA, Hideki
  • 藤原 伸介 FUJIWARA, Shinsuke
  • 吉村 雅司 YOSHIMURA, Masashi
Agents
  • 特許業務法人深見特許事務所 Fukami Patent Office, p.c.
Priority Data
2011-22299807.10.2011JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) GAN FILM MANUFACTURING METHOD AND COMPOSITE SUBSTRATE USED IN SAME
(FR) PROCÉDÉ DE FABRICATION DE FILM DE GAN ET SUBSTRAT COMPOSITE UTILISÉ DANS LEDIT PROCÉDÉ
(JA) GaN系膜の製造方法およびそれに用いられる複合基板
Abstract
(EN) This GaN film manufacturing method includes: a step of preparing a composite substrate (10), which includes a supporting substrate (11) that dissolves in a hydrofluoric acid, and a single crystal film (13) disposed on the main surface (11m) side of the supporting substrate (11), and has a thermal expansion coefficient in the main surface (11m) of the supporting substrate (11) more than 0.8 times but less than 1.2 times a thermal expansion coefficient of a GaN crystal; a step of forming a GaN film (20) on the main surface (13m) of the single crystal film (13) disposed on the main surface (11m) side of the supporting substrate (11); and a step of removing the supporting substrate (11) by dissolving the supporting substrate in the hydrofluoric acid. Consequently, the GaN film manufacturing method whereby the GaN film having a large main surface area, small warpage, and excellent crystal characteristics is efficiently obtained, and the composite substrate used in the method are provided.
(FR) L'invention concerne un procédé de fabrication d'un film de GaN qui inclut : une étape de préparation d'un substrat composite (10), qui inclut un substrat de support (11) qui se dissout dans un acide fluorhydrique, et un film à cristal unique (13) disposé sur le côté de surface principale (11m) du substrat de support (11), et possède un coefficient de dilatation thermique dans la surface principale (11m) du substrat de support (11) plus de 0,8 fois mais moins de 1,2 fois un coefficient de dilatation thermique d'un cristal de GaN ; une étape de formation d'un film de GaN (20) sur la surface principale (13m) du film de cristal unique (13) disposé sur le côté de la surface principale (11m) du substrat de support (11); et une étape d'élimination du substrat de support (11) par dissolution du substrat de support dans l'acide fluorhydrique. Par conséquent, le procédé de fabrication du film de GaN, par lequel le film de GaN ayant une grande aire de surface principale, une petite déformation et d'excellentes caractéristiques de cristal est obtenu efficacement, et le substrat composite utilisé dans le procédé sont fournis.
(JA)  本GaN系膜の製造方法は、フッ化水素酸に溶解する支持基板(11)と、支持基板(11)の主面(11m)側に配置されている単結晶膜(13)と、を含み、支持基板(11)の主面(11m)内の熱膨張係数が、GaN結晶の熱膨張係数に比べて、0.8倍より大きく1.2倍より小さい複合基板(10)を準備する工程と、支持基板(11)の主面(11m)側に配置されている単結晶膜(13)の主面(13m)上にGaN系膜(20)を成膜する工程と、支持基板(11)を、フッ化水素酸に溶解することにより、除去する工程と、を含む。これにより、主面の面積が大きく反りが小さく結晶性が良好なGaN系膜が効率よく得られるGaN系膜の製造方法およびそれに用いられる複合基板が提供される。
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