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Machine translation
1. (WO2013050707) RAM MEMORY POINT WITH A TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/050707    International Application No.:    PCT/FR2012/052246
Publication Date: 11.04.2013 International Filing Date: 04.10.2012
IPC:
H01L 27/108 (2006.01), H01L 21/84 (2006.01), H01L 27/12 (2006.01), G11C 11/404 (2006.01), H01L 29/78 (2006.01)
Applicants: UNIVERSIDAD DE GRANADA [ES/ES]; Hospital Real Cuesta del Hospicio s/n E-18071 Granada (ES).
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR/FR]; 3, rue Michel Ange F-75794 Paris Cedex 16 (FR)
Inventors: RODRIGUEZ, Noel; (ES).
GAMIZ, Francisco; (ES).
CRISTOLOVEANU, Sorin, Ioan; (FR)
Agent: CABINET BEAUMONT; 1, rue Champollion F-38000 Grenoble (FR)
Priority Data:
1158942 04.10.2011 FR
Title (EN) RAM MEMORY POINT WITH A TRANSISTOR
(FR) POINT MÉMOIRE RAM A UN TRANSISTOR
Abstract: front page image
(EN)The invention relates to a memory point consisting of a semiconducting bar whose ends are strongly doped so as to constitute source and drain regions (101, 102) and whose central part comprises, between the source and drain regions, an N-type region (104) surrounded over the larger part of its periphery by a quasi-intrinsic P-type region (105), the P-type region itself being surrounded by an insulated gate (107).
(FR)L'invention concerne un point mémoire constitué d'un bâtonnet semiconducteur dont les extrémités sont fortement dopées pour constituer des régions de source et de drain (101, 102) et dont la partie centrale comprend, entre les régions de source et de drain, une région de type N (104) entourée sur la plus grande partie de sa périphérie d'une région de type P quasi intrinsèque (105), la région de type P étant elle-même entourée d'une grille isolée (107).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)