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Machine translation
1. (WO2013049417) LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/049417    International Application No.:    PCT/US2012/057664
Publication Date: 04.04.2013 International Filing Date: 27.09.2012
IPC:
H01L 33/12 (2010.01)
Applicants: TOSHIBA TECHNO CENTER, INC. [JP/JP]; 1-1-1, Shibaura 1-chome Minato-ku, Tokyo 105-8001 (JP) (For All Designated States Except US).
YANG, Long [US/US]; (US) (US only).
FENWICK, William [--/US]; (US) (US only)
Inventors: YANG, Long; (US).
FENWICK, William; (US)
Priority Data:
13/249,157 29.09.2011 US
Title (EN) LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS
(FR) DISPOSITIFS ÉMETTEURS DE LUMIÈRE COMPRENANT DES COUCHES TAMPONS DE MAINTIEN DE DENSITÉ DE DISLOCATION
Abstract: front page image
(EN)A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.
(FR)L'invention concerne un procédé de formation d'un dispositif émetteur de lumière, consistant à former plusieurs couches comprenant un substrat, une couche de nitrure de gallium-aluminium adjacente au substrat, et une couche de nitrure de gallium adjacente à la couche de nitrure de gallium-aluminium. Pendant la formation de chacune desdites plusieurs couches, un ou plusieurs paramètres de traitement sont choisis de sorte qu'une couche individuelle parmi lesdites plusieurs couches soit mise sous contrainte.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)