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Machine translation
1. (WO2013048524) SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/048524    International Application No.:    PCT/US2011/054479
Publication Date: 04.04.2013 International Filing Date: 01.10.2011
IPC:
H01L 29/78 (2006.01), H01L 21/336 (2006.01)
Applicants: INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95052 (US) (For All Designated States Except US).
PRADHAN, Sameer S. [IN/US]; (US) (For US Only).
JOSHI, Sabhash, M. [IN/US]; (US) (For US Only).
CHUN, Jin-Sung [US/US]; (US) (For US Only)
Inventors: PRADHAN, Sameer S.; (US).
JOSHI, Sabhash, M.; (US).
CHUN, Jin-Sung; (US)
Agent: DRAEGER, Jeffrey, S.; Winkle, PLLC c/o CPA GLOBAL P.O. Box 52050 Minneapolis, Minnesota 55402 (US)
Priority Data:
Title (EN) SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS
(FR) CONTACTS DE SOURCE/DRAIN POUR TRANSISTORS NON PLANS
Abstract: front page image
(EN)The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.
(FR)La présente invention concerne le domaine de la fabrication de dispositifs microélectroniques ayant des transistors non plans. Des modes de réalisation de la présente invention concernent la formation de contacts de source/drain dans des transistors non plans, une interface de contact à teneur en titane pouvant être utilisée dans la formation du contact de source/drain ayant un siliciure de titane discret formé entre l'interface à teneur en titane et une structure de source/drain à teneur en silicium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)