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1. WO2013047232 - REGENERATION METHOD FOR TANTALUM COIL FOR SPUTTERING AND TANTLUM COIL OBTAINED BY REGENERATION METHOD

Publication Number WO/2013/047232
Publication Date 04.04.2013
International Application No. PCT/JP2012/073586
International Filing Date 14.09.2012
IPC
C23C 14/34 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/00 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
CPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/564
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
H01J 37/32853
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
32853Hygiene
H01J 37/3288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
3288Maintenance
H01J 37/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
H01J 37/3447
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3411Constructional aspects of the reactor
3447Collimators, shutters, apertures
Applicants
  • JX日鉱日石金属株式会社 JX Nippon Mining & Metals Corporation [JP]/[JP] (AllExceptUS)
  • 塚本 志郎 TSUKAMOTO Shiro [JP]/[JP] (UsOnly)
Inventors
  • 塚本 志郎 TSUKAMOTO Shiro
Agents
  • 小越 勇 OGOSHI Isamu
Priority Data
2011-21801730.09.2011JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) REGENERATION METHOD FOR TANTALUM COIL FOR SPUTTERING AND TANTLUM COIL OBTAINED BY REGENERATION METHOD
(FR) PROCÉDÉ DE RÉGÉNÉRATION D'UNE BOBINE DE TANTALE POUR PULVÉRISATION CATHODIQUE ET BOBINE DE TANTALE OBTENUE PAR LE PROCÉDÉ DE RÉGÉNÉRATION
(JA) スパッタリング用タンタル製コイルの再生方法及び該再生方法によって得られたタンタル製コイル
Abstract
(EN) The present invention relates to a method for regenerating a tantalum coil for sputtering that is disposed between a substrate and a sputtering target wherein the method for regenerating the tantalum coil for sputtering is characterized by a surface being removed (cutting until a re-deposition film or knurling processing remains are eliminated) by a process of cutting the entire or part of the coil surface of a tantalum coil that has been used, eliminating a re-deposition film formed during sputtering, and thereafter, applying new knurling to the locations that have been cut. The problem addressed by the present invention is: during sputtering, sputtering particles are deposited (re-deposition) on the surface of the tantalum coil, which is disposed between the substrate and sputtering target; however, when sputtering is completed, the sputtering particles that have been deposited on the coil that has been used are to be eliminated by cutting, and the tantalum coil can thus be regenerated efficiently; thus, technology that can provide elimination of unnecessary production of new coils, increase productivity, and stably provide these coils is provided.
(FR) La présente invention concerne un procédé de régénération d'une bobine de tantale pour pulvérisation cathodique qui est disposée entre un substrat et une cible de pulvérisation cathodique, le procédé de régénération de la bobine de tantale pour pulvérisation cathodique étant caractérisé par une surface qui est retirée (découpe jusqu'à ce qu'un film de re-dépôt ou des restes de traitement de moletage soient éliminés) par un procédé de découpe de la totalité ou d'une partie de la surface de la bobine d'une bobine de tantale qui a été utilisée, une élimination d'un film de re-dépôt formé pendant la pulvérisation cathodique, et, par la suite, l'application d'un nouveau moletage aux emplacements qui ont été découpés. Le problème auquel s'attaque la présente invention est le suivant : pendant une pulvérisation cathodique, des particules de pulvérisation cathodique sont déposées (re-dépôt) sur la surface de la bobine de tantale, qui est disposée entre le substrat et la cible de pulvérisation cathodique; cependant, lorsque la pulvérisation cathodique est achevée, les particules de pulvérisation cathodique qui ont été déposées sur la bobine qui a été utilisée doivent être éliminées par découpe, et la bobine de tantale peut ainsi être régénérée de manière efficace. Ainsi, l'invention propose une technologie qui peut fournir une élimination de production non nécessaire de nouvelles bobines, augmenter la productivité et fournir de façon stable ces bobines.
(JA) 基板とスパッタリングターゲットとの間に配置するスパッタリング用タンタル製コイルの再生方法であって、使用済みのタンタル製コイルをコイル全面あるいは一部を切削加工により、一面引き(リデポ膜及びナーリング加工跡がなくなるまで切削)して、スパッタリング中に形成されたリデポ膜を除去し、その後、切削した箇所に、新たにナーリングをかけることを特徴とするスパッタリング用タンタル製コイルの再生方法に関する。スパッタリング中に、基板とスパッタリングターゲットとの間に配置したタンタル製コイルの表面にスパッタ粒子が堆積(リデポ)するが、スパッタリング終了後に、この使用済みのコイルに堆積したスパッタ粒子を切削により除去して、タンタル製コイルを効率良く再生するものであり、これによって新コイル作製の無駄を排除し、生産性を向上させ、同コイルを安定して提供できる技術を提供することを課題とする。
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