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1. (WO2013046564) NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LED SYSTEM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2013/046564    International Application No.:    PCT/JP2012/005775
Publication Date: 04.04.2013 International Filing Date: 12.09.2012
IPC:
H01L 33/32 (2010.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
INOUE, Akira; (For US Only).
YOSHIDA, Shunji; (For US Only).
YOKOGAWA, Toshiya; (For US Only)
Inventors: INOUE, Akira; .
YOSHIDA, Shunji; .
YOKOGAWA, Toshiya;
Agent: OKUDA, Seiji; OKUDA & ASSOCIATES, 10th Floor, Osaka Securities Exchange Bldg., 8-16, Kitahama 1-chome, Chuo-ku, Osaka-shi, Osaka 5410041 (JP)
Priority Data:
2011-215130 29.09.2011 JP
2011-215206 29.09.2011 JP
Title (EN) NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LED SYSTEM
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR AU NITRURE ET SYSTÈME DE DEL
(JA) 窒化物半導体発光素子およびLEDシステム
Abstract: front page image
(EN)This nitride semiconductor light emitting element has a light emitting layer. The light emitting layer includes an InxGa1-xN well layer (0xGa1-xN well layer profile (depth profile) in the depth direction with an In composition ratio (x) has a plurality of peaks, and the values of the In composition ratio (x) at respective peaks are different from each other.
(FR)La présente invention concerne un élément électroluminescent à semi-conducteur au nitrure présentant une couche électroluminescente. La couche électroluminescente comprend une couche de puits InxGa1-xN (0xGa1-xN (profil en profondeur) dans la direction en profondeur, un rapport de composition d'In (x) présentant une pluralité de pics, et les valeurs du rapport de composition d'In (x) aux pics respectifs étant différentes les unes des autres.
(JA) 本開示の窒化物半導体発光素子は、発光層を有する窒化物半導体発光素子であって、発光層は、主面がm面であるInxGa1-xN井戸層(0<x≦1)を含み、InxGa1-xN井戸層におけるIn組成比xの深さ方向プロファイル(depth profile)は複数のピークを有しており、複数のピークのそれぞれにおけるIn組成比xの値は異なっている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)