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1. WO2013018238 - BALL BONDING WIRE

Publication Number WO/2013/018238
Publication Date 07.02.2013
International Application No. PCT/JP2011/078635
International Filing Date 05.12.2011
IPC
H01L 21/60 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
C22C 5/06 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
CPC
C22C 5/06
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
5Alloys based on noble metals
06Alloys based on silver
H01L 2224/04042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
H01L 2224/05644
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05638the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
05644Gold [Au] as principal constituent
H01L 2224/05655
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05638the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
05655Nickel [Ni] as principal constituent
H01L 2224/05664
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05663the principal constituent melting at a temperature of greater than 1550°C
05664Palladium [Pd] as principal constituent
H01L 2224/32225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
31Structure, shape, material or disposition of the layer connectors after the connecting process
32of an individual layer connector
321Disposition
32151the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
32221the body and the item being stacked
32225the item being non-metallic, e.g. insulating substrate with or without metallisation
Applicants
  • タツタ電線株式会社 TATSUTA ELECTRIC WIRE & CABLE CO., LTD. [JP]/[JP] (AllExceptUS)
  • 長谷川 剛 HASEGAWA, Tsuyoshi [JP]/[JP] (UsOnly)
Inventors
  • 長谷川 剛 HASEGAWA, Tsuyoshi
Agents
  • 鎌田 文二 KAMADA Bunji
Priority Data
2011-16843301.08.2011JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) BALL BONDING WIRE
(FR) FIL DE SOUDAGE PAR BOULE
(JA) ボールボンディングワイヤ
Abstract
(EN)
Disclosed is a bonding wire (W), which has high bondability to an Ni/Pd/Au coated electrode (a) having high reliability at high temperatures, causes less damage to brittle chips, and has low cost. Specifically disclosed is a silver bonding wire for connecting to each other the Ni/Pd/Au coated electrode (a) of a semiconductor element and conductor wiring (c) of a circuit wiring board by means of a ball bonding method, said silver bonding wire having a wire diameter of 10-50 μm. A coating layer (2) composed of Pt or Pd is formed on the outer circumferential surface of a core material (1), and the ratio (%) between the cross-sectional area of the coating layer and the cross-sectional area of the wire is set at 0.1-0.6 %. Since a spherical FAB (ball (b)) shown in Fig. (a, b), said FAB having no unmelted portion (hollow), can be obtained by having a coating layer thickness (t) with the cross-sectional area ratio, chip damages are not easily generated. The core material (1) contains, in total, 0.5-5.0 mass % of one or more kinds of elements selected from among Pd, Pt and Au, 5-500 mass ppm of one or more kinds of elements selected from among Ca, Cu and rare earthes, and the remainder composed of Ag and inevitable impurities.
(FR)
L'invention porte sur un fil de soudage (W) qui a une aptitude au soudage élevée sur une électrode revêtue de Ni/Pd/Au (a) ayant une fiabilité élevée à hautes températures, qui cause moins de dommages à des puces cassantes, et a un coût faible. L'invention porte de façon spécifique sur un fil de soudage à l'argent pour relier l'un à l'autre l'électrode revêtue de Ni/Pd/Au (a) d'un élément semi-conducteur et un câblage conducteur (c) d'une carte de connexion de circuit au moyen d'un procédé soudage par boule, ledit fil de soudage à l'argent ayant un diamètre de fil de 10-50 µm. Une couche de revêtement (2) composée de Pt ou Pd est formée sur la surface circonférentielle extérieure d'une matière de cœur (1), et le rapport (%) entre la section transversale de la couche de revêtement et la section transversale du fil est réglé à 0,1-0,6 %. Du fait qu'une FAB sphérique (boule (b)) représentée sur la figure (a, b), ladite FAB ayant aucune partie non fondue (creuse), peut être obtenue en ayant une épaisseur de couche de revêtement (t) ayant le rapport de sections transversales, des dommages aux puces ne sont pas facilement générés. La matière de cœur (1) contient, en total, 0,5-5,0 % en masse d'un ou plusieurs genres d'éléments choisis parmi Pd, Pt et Au, 5-500 ppm en masse d'un ou plusieurs genres d'éléments choisi parmi Ca, Cu et les terres rares, et le reste composé d'Ag et d'impuretés inévitables.
(JA)
高温信頼性の高いNi/Pd/Au被覆電極(a)への接合性が高く、かつ脆弱なチップに対するダメージも少なく安価なボンディングワイヤ(W)とする。半導体素子のNi/Pd/Au被覆電極(a)と回路配線基板の導体配線(c)をボールボンディング法によって接続するための線径10~50μmの銀ボンディングワイヤである。芯材(1)外周面にPt又はPdの被覆層(2)を形成し、その被覆層の断面積とこのワイヤの断面積の比(%)を0.1~0.6%とする。この断面積比の被覆層厚(t)とすることによって、図(a)、(b)で示す溶け残り部分(窪み)の無い真球状のFAB(ボールb)を得ることができるため、チップダメージが発生し難い。芯材(1)は、Pd、Pt又はAuから選ばれる1種以上を合計で0.5~5.0質量%含み、かつCa、Cu、希土類から選ばれる1種以上の元素を合計で5~500質量ppm含んで、それ以外がAg及び不可避不純物からなる。
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