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1. WO2013015947 - HETEROLEPTIC (ALLYL)(PYRROLES-2-ALDIMINATE) METAL-CONTAINING PRECURSORS, THEIR SYNTHESIS AND VAPOR DEPOSITION THEREOF TO DEPOSIT METAL-CONTAINING FILMS

Publication Number WO/2013/015947
Publication Date 31.01.2013
International Application No. PCT/US2012/044950
International Filing Date 29.06.2012
IPC
C07F 15/06 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
06Cobalt compounds
C07F 15/04 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
04Nickel compounds
C07F 15/00 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
C07B 61/00 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
BGENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
61Other general methods
CPC
C07F 15/04
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
15Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
04Nickel compounds
H01L 21/28506
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
H01L 21/76838
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
Applicants
  • L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE [FR]/[FR] (AllExceptUS)
  • LANSALOT-MATRAS, Clément [FR]/[KR] (UsOnly)
  • KOROLEV, Andrey, V. [RU]/[US] (UsOnly)
Inventors
  • LANSALOT-MATRAS, Clément
  • KOROLEV, Andrey, V.
Agents
  • MCQUEENEY, Patricia, E.
Priority Data
61/510,85722.07.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HETEROLEPTIC (ALLYL)(PYRROLES-2-ALDIMINATE) METAL-CONTAINING PRECURSORS, THEIR SYNTHESIS AND VAPOR DEPOSITION THEREOF TO DEPOSIT METAL-CONTAINING FILMS
(FR) PRÉCURSEURS HÉTÉROLEPTIQUES DE TYPE (ALLYL)(PYRROLES-2-ALDIMINATE) CONTENANT UN MÉTAL, LEUR SYNTHÈSE ET DÉPÔT EN PHASE VAPEUR DE CEUX-CI POUR DÉPOSER DES FILMS CONTENANT DU MÉTAL
Abstract
(EN)
Disclosed are metal-containing precursors having the formula Compound (I) wherein: - M is a metal selected from Ni, Co, Mn, Pd; and - each of R-1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from H; a C1 -C4 linear, branched, or cyclic alkyl group; a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1 -C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed metal-containing precursors to deposit metal-containing films on a substrate via a vapor deposition process.
(FR)
L'invention porte sur des précurseurs contenant un métal répondant à la formule (I) dans laquelle : M représente un métal choisi parmi Ni, Co, Mn et Pd ; chacun de R1, R2, R3, R4, R5, R6, R7, R8, R9 et R10 est indépendamment choisi parmi H, un groupe alkyle en C1-C4 linéaire, ramifié ou cycliqu, un groupe alkylsilyle en C1-C4 linéaire, ramifié ou cyclique (monoalkylsilyle, dialkylsilyle ou trialkylsilyle), un groupe alkylamino en C1-C4 linéaire, ramifié ou cyclique, ou un groupe alkyle fluoré en C1-C4 linéaire, ramifié ou cyclique. L'invention porte également sur des procédés de synthèse et d'utilisation des précurseurs contenant un métal pour déposer des films contenant du métal sur un substrat par un procédé de dépôt en phase vapeur.
Also published as
Latest bibliographic data on file with the International Bureau