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1. WO2013015642 - METHOD FOR GROWTH OF INGOT

Publication Number WO/2013/015642
Publication Date 31.01.2013
International Application No. PCT/KR2012/005988
International Filing Date 26.07.2012
IPC
C30B 23/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
C30B 29/36 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
C30B 23/066
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
06Heating of the deposition chamber, the substrate or the materials to be evaporated
066Heating of the material to be evaporated
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • LG INNOTEK CO., LTD. [KR]/[KR] (AllExceptUS)
  • MIN, Kyoung Seok [KR]/[KR] (UsOnly)
  • SHIN, Dong Geun [KR]/[KR] (UsOnly)
Inventors
  • MIN, Kyoung Seok
  • SHIN, Dong Geun
Agents
  • SEO, Kyo Jun
Priority Data
10-2011-007547428.07.2011KR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR GROWTH OF INGOT
(FR) PROCÉDÉ DE DÉVELOPPEMENT D'UN LINGOT
Abstract
(EN)
A method for growing an ingot according to the embodiment includes filling a first powder in a crucible; raising a temperature of the crucible; forming a second powder by grain-growing the first powder; and growing the ingot by sublimating the second powder.
(FR)
Un procédé de développement d'un lingot selon le mode de réalisation comprend les étapes consistant à verser une première poudre dans un creuset ; augmenter une température du creuset ; former une seconde poudre par le développement en grain de la première poudre ; et développer le lingot par la sublimation de la seconde poudre.
Also published as
Latest bibliographic data on file with the International Bureau