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1. WO2013014547 - Tunnel field-effect transistor

Publication Number WO/2013/014547
Publication Date 31.01.2013
International Application No. PCT/IB2012/053088
International Filing Date 19.06.2012
IPC
H01L 29/739 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
CPC
H01L 29/42312
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
42312Gate electrodes for field effect devices
H01L 29/7391
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7391Gated diode structures
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • MOSELUND, Kirsten Emilie [DK]/[CH] (UsOnly)
  • STANLEY-MARBELL, Phillip [GH]/[CH] (UsOnly)
  • DOERING, Andreas Christian [DE]/[CH] (UsOnly)
  • BJOERK, Mikael T. [SE]/[CH] (UsOnly)
Inventors
  • MOSELUND, Kirsten Emilie
  • STANLEY-MARBELL, Phillip
  • DOERING, Andreas Christian
  • BJOERK, Mikael T.
Agents
  • MEYER, Michael
Priority Data
11175123.622.07.2011EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) Tunnel field-effect transistor
(FR) TRANSISTOR À EFFET DE CHAMP À EFFET TUNNEL
Abstract
(EN)
The present invention relates to a tunnel field-effect transistor (1) comprising: at least a source region (2) comprising a corresponding source semiconductor material; at least a drain region (3) comprising a corresponding drain semiconductor material, and at least a channel region (4) comprising a corresponding channel semiconductor material, which is arranged between the source region (2) and the drain region(3), the tunnel field-effect transistor (1)further comprising: at least a source-channel gate electrode (5) provided on at least an interface (5') between the source region (2) and the channel region (4); at least an insulator (5") corresponding to the source-channel gate electrode (5) that is provided between the source-channel gate electrode (5) and at least the interface (5') between the source region (2) and the channel region (4), at least a drain-channel gate electrode (6) provided on at least an interface(6') between the drain region (3) and the channel region(4), and at least an insulator(6") corresponding to the drain-channel gate electrode (6) that is provided between the drain-channel gate electrode (6) and at least the interface (6) between the drain region (3) and the channel region(4).
(FR)
La présente invention concerne un transistor à effet de champ à effet tunnel (1) qui comporte : au moins une région de source (2) comportant un matériau semi-conducteur de source correspondant; au moins une région de drain (3) comportant un matériau semi-conducteur de drain correspondant; et au moins une région de canal (4) comportant un matériau semi-conducteur de canal correspondant, disposée entre la région de source (2) et la région de drain (3). Le transistor à effet de champ à effet tunnel (1) comporte en outre : au moins une électrode de grille source-canal (5) disposée sur au moins une interface (5') entre la région de source (2) et la région de canal (4); au moins un isolant (5''), correspondant à l'électrode de grille source-canal (5), disposé entre l'électrode de grille source-canal (5) et au moins l'interface (5') entre la région de source (2) et la région de canal (4); au moins une électrode de grille drain-canal (6) disposée sur au moins une interface (6') entre la région de drain (3) et la région de canal (4), et au moins un isolant (6''), correspondant à l'électrode de grille drain-canal (6), qui est disposé entre l'électrode de grille drain-canal (6) et au moins l'interface (6) entre la région de drain (3) et la région de canal (4).
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