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1. WO2013014457 - HIGH SPEED VERTICAL-CAVITY SUFACE-EMITTING LASER

Publication Number WO/2013/014457
Publication Date 31.01.2013
International Application No. PCT/GB2012/051798
International Filing Date 26.07.2012
IPC
H01S 5/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
H01S 5/183 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
H01S 5/062 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01S 5/06226
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
06226Modulation at ultra-high frequencies
H01S 5/18311
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18308having a special structure for lateral current or light confinement
18311using selective oxidation
H01S 5/18358
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18358containing spacer layers to adjust the phase of the light wave in the cavity
H01S 5/3403
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
3403having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
H01S 5/3415
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
3415containing details related to carrier capture times into wells or barriers
Applicants
  • OCLARO TECHNOLOGY LIMITED [GB]/[GB] (AllExceptUS)
  • KAISER, Wolfgang [DE]/[CH] (UsOnly)
  • TROGER, Jörg [CH]/[CH] (UsOnly)
  • MOSER, Michael [DE]/[CH] (UsOnly)
Inventors
  • KAISER, Wolfgang
  • TROGER, Jörg
  • MOSER, Michael
Agents
  • TALBOT-PONSONBY, Daniel
Priority Data
1112927.727.07.2011GB
13/416,98109.03.2012US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH SPEED VERTICAL-CAVITY SUFACE-EMITTING LASER
(FR) LASER À CAVITÉ VERTICALE ET À ÉMISSION PAR LA SURFACE À VITESSE ÉLEVÉE
Abstract
(EN)
There is described a high speed vertical-cavity surface-emitting laser (VCSEL) comprising a substrate and first and second distributed Bragg reflectors (DBRs) disposed on the substrate, each comprising a stack of layers of alternating refractive index. A resonant cavity is disposed between the DBRs and an active region disposed in the resonant cavity. The resonant cavity is formed of material having low refractive index and has an optical thickness in a direction perpendicular to the substrate of ½λ, where λ is the wavelength of light emitted by the VCSEL.
(FR)
L'invention porte sur un laser à cavité verticale et à émission par la surface à vitesse élevée (VCSEL) comprenant un substrat et des premier et second réflecteurs de Bragg répartis (DBR), disposés sur le substrat, chacun comprenant un empilement de couches d'indice de réfraction alterné. Une cavité résonnante est disposée entre les DBR et une région active disposée dans la cavité résonnante. La cavité résonnante est formée d'une matière ayant un indice de réfraction faible et présente une épaisseur optique dans une direction perpendiculaire au substrat de ½λ, où λ est la longueur d'onde de la lumière émise par le VCSEL.
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