Processing

Please wait...

Settings

Settings

Goto Application

1. WO2013012562 - METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS

Publication Number WO/2013/012562
Publication Date 24.01.2013
International Application No. PCT/US2012/045496
International Filing Date 05.07.2012
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H03H 7/40 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
7Multiple-port networks comprising only passive electrical elements as network components
38Impedance-matching networks
40Automatic matching of load impedance to source impedance
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01J 37/32082
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
H01J 37/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
321the radio frequency energy being inductively coupled to the plasma
H01J 37/32155
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32137controlling of the discharge by modulation of energy
32155Frequency modulation
H01J 37/32174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • LAI, Canfeng [US]/[US] (UsOnly)
  • ABERLE, David, E. [US]/[US] (UsOnly)
  • KAMP, Michael, P. [US]/[US] (UsOnly)
  • BARANDICA, Henry [US]/[US] (UsOnly)
  • HILKENE, Martin, A. [GB]/[US] (UsOnly)
  • SCOTNEY-CASTLE, Matthew, D. [GB]/[US] (UsOnly)
  • TOBIN, Jeffrey [US]/[US] (UsOnly)
  • BURNS, Douglas, H. [US]/[US] (UsOnly)
  • HAWRYLCHAK, Lara [US]/[US] (UsOnly)
  • PORSHNEV, Peter, I. [US]/[US] (UsOnly)
Inventors
  • LAI, Canfeng
  • ABERLE, David, E.
  • KAMP, Michael, P.
  • BARANDICA, Henry
  • HILKENE, Martin, A.
  • SCOTNEY-CASTLE, Matthew, D.
  • TOBIN, Jeffrey
  • BURNS, Douglas, H.
  • HAWRYLCHAK, Lara
  • PORSHNEV, Peter, I.
Agents
  • TABOADA, Alan
Priority Data
13/183,92115.07.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS
(FR) PROCÉDÉS ET APPAREIL DE RÉGULATION DE DISTRIBUTION DE PUISSANCE DANS DES SYSTÈMES DE TRAITEMENT DE SUBSTRAT
Abstract
(EN)
Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.
(FR)
L'invention concerne des procédés et un appareil de régulation de distribution de puissance dans un système de traitement de substrat. Dans certains modes de réalisation, un système de traitement de substrat comprend une chambre de traitement dotée d'un support de substrat et d'une région de traitement disposée au-dessus du support de substrat ; d'un premier conduit disposé au-dessus de la région de traitement afin de fournir une partie d'un premier chemin toroïdal qui s'étend à travers le premier conduit et à travers la région de traitement ; d'un second conduit disposé au-dessus de la région de traitement pour fournir une partie d'un second chemin toroïdal qui s'étend à travers le second conduit et à travers la région de traitement ; d'un générateur RF couplé aux premier et second conduits pour fournir une énergie RF qui a une première fréquence à chacun des premier et second conduits ; d'un réseau d'adaptation d'impédance disposé entre le générateur RF et les premier et second conduits ; et d'un répartiteur de puissance pour réguler la quantité d'énergie RF fournie aux premier et second conduits par le générateur RF.
Also published as
Latest bibliographic data on file with the International Bureau