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1. WO2013012549 - MULTI-CHAMBER CVD PROCESSING SYSTEM

Publication Number WO/2013/012549
Publication Date 24.01.2013
International Application No. PCT/US2012/045179
International Filing Date 02.07.2012
IPC
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C23C 16/4582
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
C23C 16/54
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
54Apparatus specially adapted for continuous coating
C30B 25/025
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
025Continuous growth
C30B 35/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
35Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure
Applicants
  • VEECO INSTRUMENTS INC. [US]/[US] (AllExceptUS)
  • PARANJPE, Ajit [US]/[US] (UsOnly)
  • ARMOUR, Eric A. [US]/[US] (UsOnly)
  • QUINN, William E. [US]/[US] (UsOnly)
Inventors
  • PARANJPE, Ajit
  • ARMOUR, Eric A.
  • QUINN, William E.
Agents
  • RAUSCHENBACH, Kurt
Priority Data
13/185,45018.07.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MULTI-CHAMBER CVD PROCESSING SYSTEM
(FR) SYSTÈME DE TRAITEMENT PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR À CHAMBRES MULTIPLES
Abstract
(EN)
A multi-chamber CVD system includes a plurality of substrate carriers where each substrate carrier is adapted to support at least one substrate. A plurality of enclosures are each configured to form a deposition chamber enclosing one of the plurality of substrate carriers to maintain an independent chemical vapor deposition process chemistry for performing a processing step. A transport mechanism transports each of the plurality of substrate carriers to each of the plurality of enclosures in discrete steps that allow processing steps to be performed in the plurality of enclosures for a predetermined time. In some embodiments, the substrate carrier can be rotatable.
(FR)
Un système de dépôt chimique en phase vapeur à chambres multiples comprend une pluralité de supports de substrat, chaque support de substrat étant conçu pour supporter au moins un substrat. Chaque enceinte d'une pluralité d'enceintes est conçue pour former une chambre de dépôt entourant un support de la pluralité de supports de substrat de façon à contenir un produit chimique de traitement par dépôt chimique en phase vapeur indépendant permettant d'exécuter une étape du traitement. Un mécanisme de transport transporte chaque support de la pluralité de supports de substrat jusqu'à chaque enceinte de la pluralité d'enceintes au cours d'étapes séparées qui permettent de réaliser des étapes du traitement dans la pluralité d'enceintes en un temps prédéfini. Dans certains modes de réalisation, le support de substrat peut être rotatif.
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