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1. WO2013011864 - THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF

Publication Number WO/2013/011864
Publication Date 24.01.2013
International Application No. PCT/JP2012/067535
International Filing Date 10.07.2012
IPC
B81B 3/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81C 1/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
C23C 14/14 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
H01L 41/09 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
09with electrical input and mechanical output
H01L 41/187 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
187Ceramic compositions
CPC
B81B 2201/0221
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2201Specific applications of microelectromechanical systems
02Sensors
0221Variable capacitors
B81B 2203/04
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
04Electrodes
B81C 1/00666
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00642for improving the physical properties of a device
0065Mechanical properties
00666Treatments for controlling internal stress or strain in MEMS structures
B81C 1/00698
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00642for improving the physical properties of a device
00698Electrical characteristics, e.g. by doping materials
B81C 2201/017
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2201Manufacture or treatment of microstructural devices or systems
01in or on a substrate
0161Controlling physical properties of the material
0163Controlling internal stress of deposited layers
017Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
B81C 2201/0181
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2201Manufacture or treatment of microstructural devices or systems
01in or on a substrate
0174for making multi-layered devices, film deposition or growing
0181Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
Applicants
  • 株式会社村田製作所 Murata Manufacturing Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 梅田圭一 UMEDA, Keiichi [JP]/[JP] (UsOnly)
Inventors
  • 梅田圭一 UMEDA, Keiichi
Agents
  • 特許業務法人 楓国際特許事務所 Kaede Patent Attorneys' Office
Priority Data
2011-15620115.07.2011JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF À FILM MINCE ET SON PROCÉDÉ DE FABRICATION
(JA) 薄膜デバイスおよび薄膜デバイスの製造方法
Abstract
(EN)
Provided is a thin film device that includes a thin film electrode including a main electrode layer formed of tungsten, wherein the thin film electrode has low resistivity. A thin film device (1) includes a thin film electrode (7) that has a ground layer (7A) and a main electrode layer (7B) formed on the ground layer (7A), the ground layer (7A) is formed of titanium tungsten alloy in which a surface morphology has a wave-shaped crystal structure, and the main electrode layer (7B) is formed of tungsten in which a surface morphology has a wave-shaped crystal structure.
(FR)
La présente invention se rapporte à un dispositif à film mince qui comprend une électrode à film mince comprenant une couche d'électrode principale constituée de tungstène, l'électrode à film mince ayant une faible résistivité. Un dispositif à film mince (1) comprend une électrode à film mince (7) qui possède une couche de masse (7A) et une couche d'électrode principale (7B) formée sur la couche de masse (7A), la couche de masse (7A) étant constituée d'un alliage titane-tungstène dans lequel une morphologie de surface présente une structure cristalline en forme d'ondes, et la couche d'électrode principale (7B) étant constituée de tungstène dans lequel une morphologie de surface présente une structure cristalline en forme d'ondes.
(JA)
 タングステンからなる主電極層を含む薄膜電極を備える薄膜デバイスにおいて、薄膜電極が低い抵抗率を有することを実現する。下地層(7A)と、下地層(7A)の上に形成された主電極層(7B)とを有する薄膜電極(7)を備え、下地層(7A)は、表面モフォロジーが波状である結晶構造を有するチタン・タングステン合金からなり、主電極層(7B)は、表面モフォロジーが波状である結晶構造を有するタングステンからなる、薄膜デバイス(1)。
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