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1. WO2013011787 - METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2013/011787
Publication Date 24.01.2013
International Application No. PCT/JP2012/065569
International Filing Date 19.06.2012
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 21/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 29/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
H01L 29/417 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 21/0485
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0445the devices having semiconductor bodies comprising crystalline silicon carbide
048Making electrodes
0485Ohmic electrodes
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H01L 29/45
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
45Ohmic electrodes
H01L 29/66068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66053of devices having a semiconductor body comprising crystalline silicon carbide
66068the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
H01L 29/7802
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • 堀井 拓 HORII, Taku [JP]/[JP] (UsOnly)
  • 増田 健良 MASUDA, Takeyoshi [JP]/[JP] (UsOnly)
Inventors
  • 堀井 拓 HORII, Taku
  • 増田 健良 MASUDA, Takeyoshi
Agents
  • 特許業務法人深見特許事務所 Fukami Patent Office, p.c.
Priority Data
2011-15622815.07.2011JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMICONDUCTEUR
(JA) 半導体装置の製造方法
Abstract
(EN)
A method for manufacturing an MOSFET (100) is provided with: a step of forming a gate oxide film (91) on an active layer (7); a step of forming a gate electrode (93) on the gate oxide film (91); a step of forming a source contact electrode (92) in ohmic contact with the active layer (7); and a step of forming, after forming the source contact electrode (92), an interlayer insulating film (94) composed of silicon dioxide so as to cover the gate electrode (93). The step of forming the source contact electrode (92) includes a step of forming an aluminum-containing metal layer such that the metal layer is in contact with the active layer (7), and a step of alloying the metal layer.
(FR)
L'invention concerne un procédé de fabrication d'un MOSFET (100) comprenant : une étape de formation d'un film d'oxyde de grille (91) sur une couche active (7) ; une étape de formation d'une électrode de grille (93) sur le film d'oxyde de grille (91) ; une étape de formation d'une électrode de contact de source (92) en contact ohmique avec la couche active (7) ; et, après la formation de l'électrode de contact de source (92), une étape de formation d'un film intermédiaire d'isolation (94) composé de dioxyde de silicium, de façon à couvrir l'électrode de grille (93). L'étape de formation de l'électrode de contact de source (92) comprend une étape consistant à former une couche métallique contenant de l'aluminium, de sorte que la couche de métal soit au contact de la couche active (7), et une étape d'alliage de la couche métallique.
(JA)
 MOSFET(100)の製造方法は、活性層(7)上にゲート酸化膜(91)を形成する工程と、ゲート酸化膜(91)上にゲート電極(93)を形成する工程と、活性層(7)に対してオーミック接触するソースコンタクト電極(92)を形成する工程と、ソースコンタクト電極(92)が形成された後、ゲート電極(93)を覆うように二酸化珪素からなる層間絶縁膜(94)を形成する工程とを備え、ソースコンタクト電極(92)を形成する工程は、活性層(7)に接触するようにアルミニウムを含む金属層を形成する工程と、金属層を合金化する工程とを含む。
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