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1. WO2013011289 - SWITCHING CIRCUITS

Publication Number WO/2013/011289
Publication Date 24.01.2013
International Application No. PCT/GB2012/051673
International Filing Date 13.07.2012
IPC
H03K 17/0412 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
04Modifications for accelerating switching
041without feedback from the output circuit to the control circuit
0412by measures taken in the control circuit
H03K 17/06 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
06Modifications for ensuring a fully conducting state
H03K 17/20 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
20Modifications for resetting core switching units to a predetermined state
H03K 17/10 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and -breaking
10Modifications for increasing the maximum permissible switched voltage
CPC
H03K 17/04123
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
04Modifications for accelerating switching
041without feedback from the output circuit to the control circuit
0412by measures taken in the control circuit
04123in field-effect transistor switches
H03K 17/102
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
10Modifications for increasing the maximum permissible switched voltage
102in field-effect transistor switches
H03K 17/107
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
10Modifications for increasing the maximum permissible switched voltage
107in composite switches
H03K 17/20
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
20Modifications for resetting core switching units to a predetermined state
H03K 2017/066
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
06Modifications for ensuring a fully conducting state
066Maximizing the OFF-resistance instead of minimizing the ON-resistance
H03K 2217/0081
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
2217Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
0081Power supply means, e.g. to the switch driver
Applicants
  • CAMBRIDGE ENTERPRISE LIMITED [GB]/[GB] (AllExceptUS)
  • MCMAHON, Richard Anthony [GB]/[GB] (UsOnly)
  • GUEDON, Florent [FR]/[FR] (UsOnly)
  • SINGH, Santosh Kumar [IN]/[IN] (UsOnly)
  • GARSED, Philip John [GB]/[GB] (UsOnly)
Inventors
  • MCMAHON, Richard Anthony
  • GUEDON, Florent
  • SINGH, Santosh Kumar
  • GARSED, Philip John
Agents
  • MARKS & CLERK LLP
Priority Data
1112144.915.07.2011GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SWITCHING CIRCUITS
(FR) CIRCUITS DE COMMUTATION
Abstract
(EN)
We describe a protection circuit for a normally-on silicon carbide JFET (102), comprising a first power switching connection (302a) coupled to the JFET drain; a gate driver circuit (304); and a normally-off MOSFET (202) in series between the JFET source and a second power switching connection (302b). The circuit includes a diode (214) having an anode coupled to JFET gate and a cathode coupled between- the second power switching connection (302b) and a source or drain- connection of the MOSFET (202). A control circuit (206, 210, 212) is coupled to the gate (208) of the MOSFET to sense a failure of a power supply (124, 126) to the gate driver circuit (304) and to switch off the MOSFET in response, for example using a bias circuit powered from this power supply. When the MOSFET is off the external power maintains the gate of the JFET negative with respect to the source, via a circuit including the internal capacitance of the off MOSFET and the diode.
(FR)
L'invention porte sur un circuit de protection pour un transistor JFET au carbure de silicium normalement passant, comprenant une première connexion de commutation de puissance couplée au drain du transistor JFET ; un circuit d'attaque de grille ; et un transistor MOSFET normalement bloqué en série entre la source du transistor JFET et une seconde connexion de commutation de puissance. Le circuit comprend une diode comprenant une anode couplée à la grille du transistor JFET et une cathode couplée entre une seconde connexion de commutation de puissance et une connexion de source/drain du transistor MOSFET. Un circuit de commande est couplé à la grille du transistor MOSFET afin de détecter une défaillance d'une alimentation électrique du circuit d'attaque de grille et pour bloquer le transistor MOSFET en réponse, par exemple au moyen d'un circuit de polarisation alimenté par cette alimentation électrique. Quand le transistor MOSFET est bloqué, la puissance externe maintient la grille du transistor JFET négative par rapport à la source, par l'intermédiaire d'un circuit comprenant la capacité interne du transistor MOSFET bloqué et la diode.
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