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1. WO2013011112 - METHOD AND APPARATUS FOR DETERMINING A CRITICAL DIMENSION VARIATION OF A PHOTOLITHOGRAPHIC MASK

Publication Number WO/2013/011112
Publication Date 24.01.2013
International Application No. PCT/EP2012/064249
International Filing Date 20.07.2012
IPC
G03F 1/00 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G03F 1/84 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20-G03F1/5096
82Auxiliary processes, e.g. cleaning
84Inspecting
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 1/84
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20 - G03F1/50
82Auxiliary processes, e.g. cleaning or inspecting
84Inspecting
G03F 7/70625
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70625Pattern dimensions, e.g. line width, profile, sidewall angle, edge roughness
H01L 22/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Applicants
  • CARL ZEISS SMS LTD. [IL]/[IL] (AllExceptUS)
  • PFORR, Rainer [DE]/[DE] (UsOnly)
Inventors
  • PFORR, Rainer
Agents
  • WEGNER, Hans
Priority Data
61/509,83520.07.2011US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS FOR DETERMINING A CRITICAL DIMENSION VARIATION OF A PHOTOLITHOGRAPHIC MASK
(FR) PROCÉDÉ ET APPAREIL POUR DÉTERMINER UNE VARIATION DE DIMENSION CRITIQUE D'UN MASQUE PHOTOLITHOGRAPHIQUE
Abstract
(EN)
The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.
(FR)
L'invention concerne un procédé permettant de déterminer une variation de dimension critique d'un masque photolithographique, qui consiste à : (a) utiliser des données de configuration du masque photolithographique afin de déterminer au moins deux sous-zones du masque photolithographique, chaque sous-zone comprenant un groupe de caractéristiques; (b) mesurer une distribution d'une transmission de chaque sous-zone; (c) déterminer un écart de la transmission par rapport à une valeur moyenne de transmission pour chaque sous-zone; (d) déterminer une constante spécifique de chaque sous-zone; et (e) déterminer la variation de dimension critique du masque photolithographique par combinaison pour chaque sous-zone de l'écart de la transmission et de la constante spécifique de la sous-zone.
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